In this paper we will describe the approaches that we have used to grow AlGaN‐based
multiple quantum well deep UV LED structures and to overcome issues of doping efficiency …

The growth temperature of AlN layers is one of the most important factors in metal-organic
vapor phase epitaxy (MOVPE) growth. AlN layers were grown using our customized high …

The paper presents a review of the recent development of III-nitride based deep UV light
emitting diodes (LEDs). Main applications of the deep UV LEDs are introduced. Review of …

Label-free detection of molecules and particles based on native fluorescence excited at the
ultraviolet (UV) region of the electromagnetic spectrum shows great potential for molecular …

The reduction of dislocation density is a key to improving the performance of AlN-based
devices. High-temperature annealing has attracted increasing attention as a method for …

A concept design of an ultraviolet (UV) light-emitting diode (LED) based “detect-to-warn”
bioparticle sensor operating in the two modes of real-time recognition of spectral and decay …

A set of UV light-emitting diodes (LEDs) with the peak wavelengths ranging from 255 nm to
375 nm was applied for the investigation of spectral and decay-time fluorescence signatures …

The universal problem of surface charging during focused ion milling has been fully
resolved using a flood‐gun approach based on simultaneous co‐illumination with a UV light …

We report the fabrication and characterization of a 10× 10 matrix addressable micro-pixel
AlGaN-based deep UV light-emitting diodes (LEDs) with emission at 280 nm. Deep reactive …

A novel fluorescence lifetime imaging microscopy (FLIM) working with deep UV 240–280 nm
wavelength excitations has been developed. UV-FLIM is used for measurement of defect …