Junctionless transistors: State-of-the-art
A Nowbahari, A Roy, L Marchetti - Electronics, 2020 - mdpi.com
Recent advances in semiconductor technology provide us with the resources to explore
alternative methods for fabricating transistors with the goal of further reducing their sizes to …
alternative methods for fabricating transistors with the goal of further reducing their sizes to …
A review of III-V Tunnel Field Effect Transistors for future ultra low power digital/analog applications
M Saravanan, E Parthasarathy - Microelectronics Journal, 2021 - Elsevier
Abstract Tunnel Field Effect Transistors (TFETs) have emerged as serious contenders for the
replacement of traditional MOSFET technology for the future ultra low power Analog/Digital …
replacement of traditional MOSFET technology for the future ultra low power Analog/Digital …
Improving the electrical characteristics of nanoscale triple-gate junctionless FinFET using gate oxide engineering
NB Bousari, MK Anvarifard, S Haji-Nasiri - AEU-International Journal of …, 2019 - Elsevier
This paper is about the compared performance investigation of various structures of Hetero-
Dielectric (HD) triple-gate FinFETs with different gate oxides in terms of Double Hetero Gate …
Dielectric (HD) triple-gate FinFETs with different gate oxides in terms of Double Hetero Gate …
Investigation of N+ SiGe juntionless vertical TFET with gate stack for gas sensing application
In this work, a novel N+ SiGe delta-doped gate stacked junctionless vertical tunnel field
transistor (N+ SiGe gate staked JL-VTFET) is proposed and investigated with its electrical …
transistor (N+ SiGe gate staked JL-VTFET) is proposed and investigated with its electrical …
RF & linearity distortion sensitivity analysis of DMG-DG-Ge pocket TFET with hetero dielectric
The incorporation of dual-metal, double-gate, germanium pocket and hetero gate dielectric
tunnel field effect transistor (DMG-DG-Ge pocket TFET) allows the conceptualization and …
tunnel field effect transistor (DMG-DG-Ge pocket TFET) allows the conceptualization and …
Modeling and simulation of a TFET-based label-free biosensor with enhanced sensitivity
This study discusses the use of a triple material gate (TMG) junctionless tunnel field-effect
transistor (JLTFET) as a biosensor to identify different protein molecules. Among the …
transistor (JLTFET) as a biosensor to identify different protein molecules. Among the …
A novel metal dielectric metal based GAA-junction-less TFET structure for low loss SRAM design
This paper investigates the performance of the gate all around junction-less tunnel field
effect transistor (GAA-JLTFET) device with Metal-dielectric-metal–insulator-semiconductor …
effect transistor (GAA-JLTFET) device with Metal-dielectric-metal–insulator-semiconductor …
Analytical modelling and simulation of negative capacitance junctionless FinFET considering fringing field effects
This article proposes an analytical model for channel potential and threshold voltage for
negative capacitance junctionless FinFET (NC-JL FinFET). The Poisson's equation has …
negative capacitance junctionless FinFET (NC-JL FinFET). The Poisson's equation has …
Triple metal surrounding gate junctionless tunnel FET based 6T SRAM design for low leakage memory system
The promising capability of Triple Material Surrounding Gate Junctionless Tunnel FET
(TMSG–JL–TFET) based 6 T SRAM structure is demonstrated by employing Germanium …
(TMSG–JL–TFET) based 6 T SRAM structure is demonstrated by employing Germanium …
Numerical assessment of high-k spacer on symmetric S/D underlap GAA junctionless accumulation mode silicon nanowire MOSFET for RFIC design
In this work, inclusion of high-k spacer on symmetric underlap S/D junctionless silicon
nanowire (SiNW) MOSFET is studied with an aim to analyze more realistic estimation of …
nanowire (SiNW) MOSFET is studied with an aim to analyze more realistic estimation of …