The role of electronic energy loss in ion beam modification of materials
The interaction of energetic ions with solids results in energy loss to both atomic nuclei and
electrons in the solid. In this article, recent advances in understanding and modeling the …
electrons in the solid. In this article, recent advances in understanding and modeling the …
Athermal annealing of pre-existing defects in crystalline silicon
Systematic investigations of electronic energy loss (S e) effects on pre-existing defects in
crystalline silicon (Si) are crucial to provide reliance on the use of ionizing irradiation to …
crystalline silicon (Si) are crucial to provide reliance on the use of ionizing irradiation to …
Annealing of Ag-implanted polyethylene terephthalate films by low-temperature swift 28Si4+-ion irradiation: Effects on structural and optical properties
JJ Mboukam, DC Chilukusha, M Madhuku… - Radiation Physics and …, 2024 - Elsevier
This work investigates the feasibility of using low-temperature ion irradiation to partially
anneal implantation defects in polymeric materials, with the goal of improving their structural …
anneal implantation defects in polymeric materials, with the goal of improving their structural …
Investigation of ion irradiation effects in silicon and graphite produced by 23 MeV I beam
Both silicon and graphite are radiation hard materials with respect to swift heavy ions like
fission fragments and cosmic rays. Recrystallisation is considered to be the main …
fission fragments and cosmic rays. Recrystallisation is considered to be the main …
Optical spectroscopy study of damage in ion-irradiated 3C-SiC epilayers on a silicon substrate
JM Costantini, G Gutierrez, M Guillaumet… - Journal of Applied …, 2023 - pubs.aip.org
Epitaxial cubic (100) 3C-SiC films on a (100) silicon wafer were irradiated at room
temperature with 2.3-MeV Si+ or 3.0-MeV Kr+ ions up to a fluence of 1× 10 16 cm− 2. The …
temperature with 2.3-MeV Si+ or 3.0-MeV Kr+ ions up to a fluence of 1× 10 16 cm− 2. The …
A study on the gamma and swift heavy ion irradiation-induced effects on the electrical properties of TaOx-based MOS capacitors
RSP Goud, M Akkanaboina, S Machiboyina… - Nuclear Instruments and …, 2024 - Elsevier
In this work, we present a detailed study on the effects of energetic ions and gamma
irradiation on the performance of non-stoichiometric tantalum oxide (TaO x) based Metal …
irradiation on the performance of non-stoichiometric tantalum oxide (TaO x) based Metal …
Aluminum induced crystallization of amorphous Si: Thermal annealing and ion irradiation process
The Al-induced crystallization of amorphous (a)-Si under thermal annealing and swift heavy
ion irradiation has been investigated. The c-Al (50 nm)/a-Si (150 nm) thin films have been …
ion irradiation has been investigated. The c-Al (50 nm)/a-Si (150 nm) thin films have been …
Recrystallization of ion-irradiated germanium due to intense electronic excitation
Germanium single crystals were irradiated at room temperature by 1.5 MeV energy
germanium ions and high energy silver ions of 100 MeV. Based on the transmission and …
germanium ions and high energy silver ions of 100 MeV. Based on the transmission and …
Irradiation behavior of SrTiO3 at temperatures close to the critical temperature for amorphization
Damage accumulation on both the Sr and Ti sublattices in strontium titanate (Sr Ti O 3) has
been investigated under 1.0 MeV Au+ irradiation at 360 and 400 K, close to the critical …
been investigated under 1.0 MeV Au+ irradiation at 360 and 400 K, close to the critical …
The effect of He and swift heavy ions on nanocrystalline zirconium nitride
AJ Van Vuuren, JH Neethling, VA Skuratov… - Nuclear Instruments and …, 2014 - Elsevier
Recent studies have shown that swift heavy ion irradiation may significantly modulate
hydrogen and helium behaviour in some materials. This phenomenon is of considerable …
hydrogen and helium behaviour in some materials. This phenomenon is of considerable …