A series of the BaGd 2 O 4: Bi 3+, Sm 3+ phosphors with dual emission centers were
prepared by high-temperature solid-phase method. X-ray diffraction, scanning electron …

A series of BaGd 2 O 4: Bi 3+, Eu 3+ phosphors with dual-emitting centers were prepared by
high-temperature solid-state method. X-ray diffraction (XRD), scanning electron microscope …

The mechanism for low-temperature photoluminescence (PL) emissions in GaAsSb/AlGaAs
and GaAsSbN/GaAs strained-layer single quantum wells (SQWs), grown by molecular-beam …

Abstract In this work, AlGaAs/GaAs superlattices with layer composition imitating the active
region of quantum cascade lasers emitting in the mid infrared spectral range were …

The GaAs/AlxGa1− xAs quantum wells (QWs) grown on high index surfaces have attracted
increasing attention during the past few years due to their technological applications in …

The influence of ultra-low defects and atomic irregularities at the hetero-junction on the
optical properties of free and bound excitons are investigated by the magneto …

The optical properties of In x Ga 1− x N epitaxial layers (x= 0.02, 0.04, 0.11, 0.15, 0.30 and
0.33) grown by metalorganic chemical vapor deposition (MOCVD) have been investigated …

Metalorganic chemical vapor deposition (MOCVD) has not been often used for studying
exciton-polariton condensation and developing polaritonic devices, although it is a powerful …

The optical properties of Mg x Zn 1− x O films with x= 0.03, 0.06, 0.08, and 0.11 grown by
molecular beam epitaxy (MBE) have been studied by temperature-dependent …

In the present work, it is carried out a study of the optical emission of Al x Ga 1-x As/GaAs
quantum wells by photoluminescence (PL). A detailed analysis of the thermal redshift of the …