Realizing efficient on-chip light sources has long been the “holy-grail” for Si-photonics
research. Several important breakthroughs were made in this field in the past few years. In …

Semiconductor III–V photonic crystal (PC) laser is regarded as a promising ultra-compact
light source with unique advantages of ultralow energy consumption and small footprint for …

Seamlessly integrating III-V active devices with Si passive components in a monolithic
manner is the key for fully integrated Si photonics. In this article, we demonstrate high …

Telecom-band single nanowire lasers made by the bottom-up vapor-liquid-solid approach,
which is technologically important in optical fiber communication systems, still remain …

Efficient III-V lasers directly grown on Si remain the “holy grail” for present Si-photonics
research. In particular, a bufferless III-V laser grown on the Si-photonics 220 nm silicon-on …

It is a long-standing goal to leverage silicon photonics through the combination of a low-cost
advanced silicon platform with III-V-based active gain material. The monolithic integration of …

Exploring the exciton-phonon interaction of cesium lead bromide (CsPbBr 3) perovskite
nanowires (NWs) is not only important to the fundamental understanding of phonon-assisted …

Epitaxial growth of III–V lasers on the (001) Si platform is emerging as the ultimate
integration strategy for low-cost, energy-efficient, and wafer-scale photonic integrated …

Epitaxially integrating III-V lasers with Si-photonics is the key for compact, efficient, and
scalable photonic integrated circuits (PICs). Here we present an investigation of a path …

To achieve on-chip lasers for Si-photonics, monolithic integration using selective epitaxy is a
favorable option due to the unique defect engineering and resultant bufferless structure …