The revolutions made in the CMOS technology are brought up by, continuous downscaling
in order to obtain higher density, better performance and low power consumption, causing …

The recent advances in artificial intelligence point to a dramatic acceleration in the pace of
technological evolution. In their never-ending quest to push the boundaries of what is now …

The history of integrated circuit (IC) development is another record of human challenges
involving space. Efforts have been made to protect ICs from sudden malfunctions due to …

In this work, single-event upset (SEU) responses of D flip-flop (FF) designs with different
threshold-voltage options in a 7-nm bulk FinFET technology are examined. Experimental …

In this paper, the strategic review of different materials that are used in FinFET structure is
studied. This is achieved by using carefully designed source/drain spacers and doped …

With the continuous progress in integrated circuit technology, single-event effect (SEE) has
become a key factor affecting the reliability of aerospace integrated circuits. Simulating fault …

This paper evaluates alpha-induced soft error rate (αSER) by alpha irradiation test in four
different SRAMs and simulation. The test result shows the impact of three factors on αSER …

We evaluate the soft error rate (SER) in 18 nm FDSOI-planar SRAM and investigate the
scaling trend of SER in FDSOI-planar. Our findings demonstrate that the SER in 18 nm …

This paper presents single-event upset (SEU) rates in flip-flops (FFs) in EUV 7 nm bulk-
FinFET technology. EUV technology achieves high transistor-density, small FF cell-size, and …

Surface α-particle emissivity testing and spectral characterization of two leaded tin spheres
(Sn10% Pb90%, Sn63% Pb37%) and one lead-free tin sphere (Sn96. 5% Ag3. 0% Cu0. 5 …