A ring-oscillator-based degradation monitor concept with tamper detection capability

J Diaz-Fortuny, P Saraza-Canflanca… - 2022 IEEE …, 2022 - ieeexplore.ieee.org
Refurbished chips (ie, chips re-used legally in circular economy) and counterfeited chips (ie,
used chips fraudulently sold as new) are a growing concern for the industry because of their …

Towards complete recovery of circuit degradation by annealing with on-chip heaters

J Diaz-Fortuny, P Saraza-Canflanca… - IEEE Electron …, 2022 - ieeexplore.ieee.org
This work reports an on-chip heater structure fabricated in the Front End of Line (FEOL) on a
versatile ring-oscillator (RO) array utilized to conduct statistical characterization of on-chip …

Statistical characterization of time-dependent variability defects using the maximum current fluctuation

P Saraza-Canflanca, J Martín-Martínez… - … on Electron Devices, 2021 - ieeexplore.ieee.org
This article presents a new methodology to extract, at a given operation condition, the
statistical distribution of the number of active defects that contribute to the observed device …

Modeling Analysis of BTI-driven degradation of a Ring Oscillator Designed in a 28-nm CMOS Technology

D Sangani, J Diaz-Fortuny, E Bury… - … on Device and …, 2023 - ieeexplore.ieee.org
With tightening reliability margins, product-level aging analysis is gradually gaining impetus
and is set to become an integral part of the modern design flow. Increased emphasis is …

An automated setup for the characterization of time-based degradation effects including the process variability in 40-nm CMOS transistors

X Xhafa, AD Güngördü, D Erol, Y Yavuz… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
This article reports a test chip design in commercial 40-nm process technology to
characterize the level of time-based degradation in metal-oxide-semiconductor field-effect …

A detailed study of the gate/drain voltage dependence of RTN in bulk pMOS transistors

P Saraza-Canflanca, J Martín-Martínez… - Microelectronic …, 2019 - Elsevier
Abstract Random Telegraph Noise (RTN) has attracted increasing interest in the last years.
This phenomenon introduces variability in the electrical properties of transistors, in particular …

The Role of Mobility Degradation in the BTI-Induced RO Aging in a 28-nm Bulk CMOS Technology:(Student paper)

D Sangani, J Diaz-Fortuny, E Bury… - 2023 IEEE …, 2023 - ieeexplore.ieee.org
Shrinking reliability margins have created an increasing demand for circuit aging
simulations, which enable product reliability assessment pre-production. Physical Design …

A robust and automated methodology for the analysis of Time-Dependent Variability at transistor level

P Saraza-Canflanca, J Diaz-Fortuny, R Castro-López… - Integration, 2020 - Elsevier
In the past few years, Time-Dependent Variability has become a subject of growing concern
in CMOS technologies. In particular, phenomena such as Bias Temperature Instability, Hot …

An In-Depth Study of Ring Oscillator Reliability under Accelerated Degradation and Annealing to Unveil Integrated Circuit Usage

J Diaz-Fortuny, P Saraza-Canflanca, E Bury… - Micromachines, 2024 - mdpi.com
The reliability and durability of integrated circuits (ICs), present in almost every electronic
system, from consumer electronics to the automotive or aerospace industries, have been …

Statistical threshold voltage shifts caused by BTI and HCI at nominal and accelerated conditions

J Diaz-Fortuny, P Saraza-Canflanca, R Rodriguez… - Solid-State …, 2021 - Elsevier
In nowadays deeply scaled CMOS technologies, time-zero and time-dependent variability
effects have become important concerns for analog and digital circuit design. For instance …