Linear and nonlinear optical absorption coefficients in InGaN/GaN quantum wells: Interplay between intense laser field and higher-order anharmonic potentials

R En-Nadir, MABM Kabatas, M Tihtih, H El Ghazi - Heliyon, 2023 - cell.com
This computational investigation delves into the electronic and optical attributes of
InGaN/GaN nanostructures subjected to both harmonic and anharmonic confinement …

Efficiency of InN/InGaN/GaN Intermediate-Band Solar Cell under the Effects of Hydrostatic Pressure, In-Compositions, Built-in-Electric Field, Confinement, and …

H Abboudi, H El Ghazi, R En-Nadir… - Nanomaterials, 2024 - mdpi.com
This paper presents a thorough numerical investigation focused on optimizing the efficiency
of quantum-well intermediate-band solar cells (QW-IBSCs) based on III-nitride materials …

Electronic Properties of Ultrathin InGaN/GaN Heterostructures under the Influences of Laser and Electric Fields: Investigation of the Harmonic and Inharmonic …

R En-nadir, H El Ghazi, MABM Kabatas, M Tihtih… - Physica E: Low …, 2024 - Elsevier
Defects and impurities within semiconductor materials pose significant challenges. This
investigation scrutinizes the response of a single dopant donor impurity located in …

Exploration of the normalized intradopant transition energy of GaAs quantum dot under the influence of noise

B Bhakti, M Ghosh - Physica B: Condensed Matter, 2025 - Elsevier
In this work the intradopant transition energy (IDTE) and the normalized intradopant
transition energy (NIDTE) of GaAs quantum dot (QD) have been minutely explored. The QD …

Analyzing Normalized Binding Energy of GaAs Quantum Dot Containing Gaussian Impurity: Role of Noise

B Bhakti, M Ghosh - physica status solidi (b) - Wiley Online Library
In the present study, the impurity binding energy (IBE) and the normalized IBE (NIBE) of
GaAs quantum dot (QD) are meticulously scrutinized. The QD contains Gaussian impurity as …