[PDF][PDF] Electron Energy-Loss Spectroscopy in the Electron Microscope
RF Egerton - 2011 - toc.library.ethz.ch
Within the last 30 years, electron energy-loss spectroscopy (EELS) has become a standard
analytical technique used in the transmission electron microscope to extract chemical and …
analytical technique used in the transmission electron microscope to extract chemical and …
Research on carbon nitrides
EG Wang - Progress in Materials Science, 1997 - Elsevier
The status of research on carbon nitride compounds is reviewed including exciting recent
results. On the basis of the early theoretical predictions by Cohen and co-workers in 1985 …
results. On the basis of the early theoretical predictions by Cohen and co-workers in 1985 …
Superhard and elastic carbon nitride thin films having fullerenelike microstructure
H Sjöström, S Stafström, M Boman, JE Sundgren - Physical Review Letters, 1995 - APS
CN x films were found to have a distorted graphitelike microstructure consisting of buckled
and curved basal planes using high-resolution electron microscopy. Nanoindentation …
and curved basal planes using high-resolution electron microscopy. Nanoindentation …
Ti-catalyzed Si nanowires by chemical vapor deposition: Microscopy and growth mechanisms
TI Kamins, R Stanley Williams, DP Basile… - Journal of Applied …, 2001 - pubs.aip.org
Si nanowires grow rapidly by chemical vapor deposition on Ti-containing islands on Si
surfaces when an abundant supply of Si-containing gaseous precursor is available. The …
surfaces when an abundant supply of Si-containing gaseous precursor is available. The …
Surface damage formation during ion-beam thinning of samples for transmission electron microscopy
JP McCaffrey, MW Phaneuf, LD Madsen - Ultramicroscopy, 2001 - Elsevier
All techniques employed in the preparation of samples for transmission electron microscopy
(TEM) introduce or include artifacts that can degrade the images of the materials being …
(TEM) introduce or include artifacts that can degrade the images of the materials being …
SiO2 film thickness metrology by x-ray photoelectron spectroscopy
ZH Lu, JP McCaffrey, B Brar, GD Wilk… - Applied Physics …, 1997 - pubs.aip.org
Silicon dioxide films grown by industrial thermal furnace, rapid thermal, and low-pressure
thermal methods were measured by x-ray photoelectron spectroscopy, transmission electron …
thermal methods were measured by x-ray photoelectron spectroscopy, transmission electron …
Synthesis and characterization of boron-doped Si quantum dots for all-Si quantum dot tandem solar cells
Multiple layers of Si quantum dots (QDs) in SiO2 with a narrow size distribution were
synthesized by a co-sputtering technique. Structural, electrical and optical properties of Si …
synthesized by a co-sputtering technique. Structural, electrical and optical properties of Si …
Effects of Si-rich oxide layer stoichiometry on the structural and optical properties of Si QD/SiO2 multilayer films
The effects of the stoichiometry of the Si-rich oxide (SRO) layer, O/Si ratio, on the structural
and optical properties of SRO/SiO 2 multilayer films were investigated in this work. SRO/SiO …
and optical properties of SRO/SiO 2 multilayer films were investigated in this work. SRO/SiO …
[图书][B] Scanning probe microscopes: applications in science and technology
KS Birdi - 2003 - taylorfrancis.com
Scanning Probe Microscopes: Applications in Science and Technology explains, analyzes,
and demonstrates the most widely used microscope in the family of microscopes--the …
and demonstrates the most widely used microscope in the family of microscopes--the …
Phosphorus-doped silicon quantum dots for all-silicon quantum dot tandem solar cells
Doping of Si quantum dots is important in the field of Si quantum dots-based solar cells.
Structural, optical and electrical properties of Si QDs formed as multilayers in a SiO2 matrix …
Structural, optical and electrical properties of Si QDs formed as multilayers in a SiO2 matrix …