In this paper, subthreshold design and analysis of Silicon on Insulator Fin Field Effect
Transistor (SOI FinFET) based two stage Operational Transconductance Amplifier (OTA) is …

To understand self-heating in SOI CMOS, conventional and trap-rich substrates are used to
fabricate 40nm gate length NFET pairs that share the same active region. One NFET serves …

The state-of-the-art binary logic and memory applications and computational devices are
primarily based on Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET) …

The increasing demand for data rate for mobile telecommunications has led to the use of
beamforming systems in order to notably limit the impact of free space propagation losses …

Various applications require the MOSFETs that work at a high temperature which is ambient
operating temperature higher than 125℃. However, the traditional bulk MOSFETs at high …

In this thesis, two analog predistorter circuits are designed for linearizing the CMOS power
amplifier in MIMO transceivers. The first circuit uses two parallel transistors as conventional …

A tecnologia silício sobre isolante (Silicon-on-Insulator–SOI), aplicada à transistores MOS
de efeito de campo, constitui um dos avanços na área de micro e nanoeletrônica. Uma vez …