extremely thin amorphous indium oxide transistors
Amorphous oxide semiconductor transistors have been a mature technology in display
panels for upward of a decade, and have recently been considered as promising back‐end …
panels for upward of a decade, and have recently been considered as promising back‐end …
Atomic layer deposition of conductive and semiconductive oxides
B Macco, WMM Kessels - Applied Physics Reviews, 2022 - pubs.aip.org
Conductive and semiconductive oxides constitute a class of materials of which the electrical
conductivity and optical transparency can be modulated through material design (eg, doping …
conductivity and optical transparency can be modulated through material design (eg, doping …
Scaled indium oxide transistors fabricated using atomic layer deposition
To continue to improve integrated circuit performance and functionality, scaled transistors
with short channel lengths and low thickness are needed. But further scaling of silicon …
with short channel lengths and low thickness are needed. But further scaling of silicon …
Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors
In this work, we demonstrate enhancement-mode field-effect transistors by an atomic-layer-
deposited (ALD) amorphous In2O3 channel with thickness down to 0.7 nm. Thickness is …
deposited (ALD) amorphous In2O3 channel with thickness down to 0.7 nm. Thickness is …
Amorphous IGZO TFT with High Mobility of ∼70 cm2/(V s) via Vertical Dimension Control Using PEALD
J Sheng, TH Hong, HM Lee, KR Kim… - … applied materials & …, 2019 - ACS Publications
Amorphous InGaZnO x (a-IGZO) thin-film transistors (TFTs) are currently used in flat-panel
displays due to their beneficial properties. However, the mobility of∼ 10 cm2/(V s) for the a …
displays due to their beneficial properties. However, the mobility of∼ 10 cm2/(V s) for the a …
Achieving a low-voltage, high-mobility IGZO transistor through an ALD-derived bilayer channel and a hafnia-based gate dielectric stack
Ultrahigh-resolution displays for augmented reality (AR) and virtual reality (VR) applications
require a novel architecture and process. Atomic-layer deposition (ALD) enables the facile …
require a novel architecture and process. Atomic-layer deposition (ALD) enables the facile …
Atomic layer deposition for oxide semiconductor thin film transistors: Advances in research and development
This article is a review of recent research and development advances in oxide thin film
transistors (TFTs) fabricated by atomic layer deposition (ALD) processes. The ALD process …
transistors (TFTs) fabricated by atomic layer deposition (ALD) processes. The ALD process …
High-performance thin-film transistors with an atomic-layer-deposited indium gallium oxide channel: A cation combinatorial approach
HJ Yang, HJ Seul, MJ Kim, Y Kim, HC Cho… - … applied materials & …, 2020 - ACS Publications
The effect of gallium (Ga) concentration on the structural evolution of atomic-layer-deposited
indium gallium oxide (IGO)(In1–x Ga x O) films as high-mobility n-channel semiconducting …
indium gallium oxide (IGO)(In1–x Ga x O) films as high-mobility n-channel semiconducting …
Scaled atomic-layer-deposited indium oxide nanometer transistors with maximum drain current exceeding 2 A/mm at drain voltage of 0.7 V
In this work, we demonstrate scaled back-endof-line (BEOL) compatible indium oxide (In 2 O
3) transistors by atomic layer deposition (ALD) with channel thickness (Tch) of 1.0-1.5 nm …
3) transistors by atomic layer deposition (ALD) with channel thickness (Tch) of 1.0-1.5 nm …
Atomic layer deposition of thin films: from a chemistry perspective
J Li, G Chai, X Wang - International Journal of Extreme …, 2023 - iopscience.iop.org
Atomic layer deposition (ALD) has become an indispensable thin-film technology in the
contemporary microelectronics industry. The unique self-limited layer-by-layer growth …
contemporary microelectronics industry. The unique self-limited layer-by-layer growth …