Wide band gap devices and their application in power electronics

A Kumar, M Moradpour, M Losito, WT Franke… - Energies, 2022 - mdpi.com
Power electronic systems have a great impact on modern society. Their applications target a
more sustainable future by minimizing the negative impacts of industrialization on the …

Hydrogel-based energy harvesters and self-powered sensors for wearable applications

Z Wang, N Li, Z Zhang, X Cui, H Zhang - Nanoenergy Advances, 2023 - mdpi.com
Collecting ambient energy to power various wearable electronics is considered a
prospective approach to addressing their energy consumption. Mechanical and thermal …

Exploring the nonlinear piezoresistive effect of 4H-SiC and developing MEMS pressure sensors for extreme environments

C Wu, X Fang, Q Kang, Z Fang, J Wu, H He… - Microsystems & …, 2023 - nature.com
Microelectromechanical system (MEMS) pressure sensors based on silicon are widely used
and offer the benefits of miniaturization and high precision. However, they cannot easily …

Piezoresistive 4H-SiC pressure sensor with diaphragm realized by femtosecond laser

L Wang, Y Zhao, Y Yang, X Pang, L Hao… - IEEE Sensors …, 2022 - ieeexplore.ieee.org
The widespread application of bulk silicon carbide in pressure sensing has been largely
limited by the slow etching rate of traditional micromachining processes. This paper …

Development of all-SiC absolute pressure sensor based on sealed cavity structure

H Shang, B Tian, D Wang, Y Liu… - IEEE Sensors …, 2021 - ieeexplore.ieee.org
Silicon carbide has promising potential in high temperature pressure sensors due to its
excellent material properties. This paper presents a piezoresistive n-type 4H-SiC absolute …

Femtosecond laser processing assisted SiC high-temperature pressure sensor fabrication and performance test

Y Zhao, Y Zhao, L Wang, Y Yang, Y Wang - Micromachines, 2023 - mdpi.com
Due to material plastic deformation and current leakage at high temperatures, SOI (silicon-
on-insulator) and SOS (silicon-on-sapphire) pressure sensors have difficulty working over …

Temperature characteristics of 4H-SiC substrate and thin-film resistor applied in MEMS piezoresistive sensors

Y Zhai, T Xu, G Xu, X Cao, Z Tao, H Li - IEEE Sensors Journal, 2023 - ieeexplore.ieee.org
Silicon carbide (SiC) is currently the preferred material for micro-electromechanical system
(MEMS) sensors used in extreme environments and it has been applied in many high …

Investigation on piezoresistive effect of n-type 4H-SiC based on all-SiC pressure sensors

B Tian, H Shang, D Wang, Y Liu… - IEEE Sensors …, 2022 - ieeexplore.ieee.org
Piezoresistive coefficients of materials are of great significance to the design of
piezoresistance based devices. This paper proposed an in situ extraction method to …

Application of bulk silicon carbide technology in high temperature MEMS sensors

Y Zhai, H Li, H Wu, Z Tao, G Xu, X Cao, T Xu - Materials Science in …, 2024 - Elsevier
SiC is widely used in power electronics and high-temperature devices due to its
comprehensive physicochemical properties, including high thermal stability, mechanical …

Self-Supporting Ultrathin DLC/Si3N4/SiO2 for Micro-Pressure Sensor

X Ma, Q Zhang, P Guo, H Li, Y Zhao… - IEEE Sensors …, 2021 - ieeexplore.ieee.org
In this study, we firstly reported a micro-pressure sensor based on self-supporting diamond-
like carbon (DLC)/Si 3 N 4/SiO 2 films with total thickness of 785 nm, where the DLC film was …