[HTML][HTML] Impact of the temperature on the conductive filament morphology in HfO2-based RRAM
In this letter, we study the impact of the temperature on the resistive switching effect of
TiN/Ti/HfO 2/W metal–insulator-metal devices. An analysis of the conduction mechanisms is …
TiN/Ti/HfO 2/W metal–insulator-metal devices. An analysis of the conduction mechanisms is …
Unconventional memristive nanodevices
E Tsipas, TP Chatzinikolaou… - IEEE …, 2022 - ieeexplore.ieee.org
One of the most enticing candidates for next-generation computing systems is the memristor.
Memristor-based novel architectures have demonstrated considerable promise in replacing …
Memristor-based novel architectures have demonstrated considerable promise in replacing …
Comparative Analysis of Modular Pin-Fin Heat Sink Performance: Influence of Geometric Variation on Heat Transfer Characteristics
DGC Alfian, DJ Silitonga… - International …, 2024 - publisher.uthm.edu.my
The advancement of digital technology in the age of Industrial Revolution 4.0 has driven
other engineering sectors to keep up with the progressive demand for high-performance …
other engineering sectors to keep up with the progressive demand for high-performance …
Investigations of Sic Doping Effects on the Performance Improvement of Zno-Based Rrams and Conduction Mechanism Analysis at Both High and Low Temperature
SY Chu, TJ Wang, PA Shih, KL Yeh, JH Wang… - Kuan-Lin and Wang, Jia … - papers.ssrn.com
In this experiment, SiC was doped with LZO at a Li concentration of 3 mol% using a co-
sputtering system. A bipolar RRAM for extreme temperatures was successfully fabricated by …
sputtering system. A bipolar RRAM for extreme temperatures was successfully fabricated by …