Semiconductor device and method of manufacturing the same
Y Kim, JS Yang, HW Lee - US Patent 12,068,326, 2024 - Google Patents
(57) ABSTRACT A semiconductor device includes a substrate having cell areas and power
areas that are alternately arranged in a second direction. Gate structures extend in the …
areas that are alternately arranged in a second direction. Gate structures extend in the …
Replacement material for backside gate cut feature
WC Huang, YX Huang, HY Chen, KL Cheng… - US Patent …, 2024 - Google Patents
2022-11-09 Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD
reassignment TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD …
reassignment TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD …
Semiconductor device and method
CF Fu, YL Huang, TJ Ho, HJ Lin - US Patent 11,728,218, 2023 - Google Patents
US11728218B2 - Semiconductor device and method - Google Patents US11728218B2 -
Semiconductor device and method - Google Patents Semiconductor device and method …
Semiconductor device and method - Google Patents Semiconductor device and method …
Semiconductor devices having highly integrated active and power distribution regions therein
EB Lee, WD Kim, H bae Lee, YT Hwang - US Patent 12,046,556, 2024 - Google Patents
A FINFET includes a substrate having a semiconductor fin extending upward from a first
surface thereof, and first and second power rails on first and second opposing sides of the …
surface thereof, and first and second power rails on first and second opposing sides of the …
Semiconductor device and method
HC Su, CC Chuang, SW Chang, C Yi-Hsun… - US Patent …, 2022 - Google Patents
US11532703B2 - Semiconductor device and method - Google Patents US11532703B2 -
Semiconductor device and method - Google Patents Semiconductor device and method …
Semiconductor device and method - Google Patents Semiconductor device and method …
Interconnect structures for semiconductor devices and methods of manufacturing the same
YL Huang, CF Fu, GR Wang, CM Hsu - US Patent 11,532,712, 2022 - Google Patents
A method for making a semiconductor device includes forming a first patterned structure
over an interlayer dielec tric. The interlayer dielectric overlays a first source/drain structure …
over an interlayer dielec tric. The interlayer dielectric overlays a first source/drain structure …
Complementary cell circuits employing isolation structures for defect reduction and related methods of fabrication
H Yang, J Bao - US Patent 11,295,991, 2022 - Google Patents
US11295991B2 - Complementary cell circuits employing isolation structures for defect reduction
and related methods of fabrication - Google Patents US11295991B2 - Complementary cell …
and related methods of fabrication - Google Patents US11295991B2 - Complementary cell …
Semiconductor device and method of manufacturing the same
Y Kim, JS Yang, HW Lee - US Patent 11,600,639, 2023 - Google Patents
H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state
components formed in or on a common substrate including semiconductor components …
components formed in or on a common substrate including semiconductor components …