[HTML][HTML] Analytical study of dual material surrounding gate MOSFET to suppress short-channel effects (SCEs)

A Pal, A Sarkar - Engineering Science and Technology, an International …, 2014 - Elsevier
In this paper, a 2D analytical model for the Dual Material Surrounding Gate MOSFET
(DMSG) by solving the Poisson equation has been proposed and verified using ATLAS …

Performance analysis of metal gate engineered junctionless nanosheet fet with a ft/fmax of 224/342ghz for beyond 5g (b5g) applications

S Valasa, S Tayal, LR Thoutam - Micro and Nanostructures, 2023 - Elsevier
This manuscript for the first time investigates the effect of Dual Metal on Gate Junctionless
Nanosheet FET (DMG-JL-NSFET) for analog/RF applications. The entire analysis is …

RF & linearity distortion sensitivity analysis of DMG-DG-Ge pocket TFET with hetero dielectric

KN Priyadarshani, S Singh, A Naugarhiya - Microelectronics Journal, 2021 - Elsevier
The incorporation of dual-metal, double-gate, germanium pocket and hetero gate dielectric
tunnel field effect transistor (DMG-DG-Ge pocket TFET) allows the conceptualization and …

Analysis of triple metal surrounding gate (TM-SG) III–V nanowire MOSFET for photosensing application

SK Sharma, A Jain, B Raj - Opto-Electronics Review, 2018 - Elsevier
In this paper, a low power highly sensitive Triple Metal Surrounding Gate (TM-SG) Nanowire
MOSFET photosensor is proposed which uses triple metal gates for controlling short …

An analytical drain current model for dual material engineered cylindrical/surrounded gate MOSFET

P Ghosh, S Haldar, RS Gupta, M Gupta - Microelectronics Journal, 2012 - Elsevier
In this paper, a drain current model incorporating drain-induced barrier lowering (DIBL) has
been developed for Dual Material gate Cylindrical/Surrounding gate MOSFET (DMG …

Analytical modeling and simulation of gate-all-around Junctionless Mosfet for biosensing applications

S Preethi, M Venkatesh, M Karthigai Pandian… - Silicon, 2021 - Springer
A new analytical model for a Junctionless Field Effect Transistor that can be used in
biosensor applications is proposed in this research work. The Semiconductor device …

Source material valuation of charge plasma based DG-TFET for RFIC applications

P Goyal, G Srivastava, J Madan… - Semiconductor …, 2022 - iopscience.iop.org
This paper seeks to present a comprehensive analysis to check the viability of four different
source materials in a charge plasma-based double gate tunnel field effect transistor (CP …

Analytical modeling of a dual-material graded-channel cylindrical gate-all-around FET to minimize the short-channel effects

PK Mudidhe, BR Nistala - Journal of Computational Electronics, 2023 - Springer
In this paper, an analytical model for center potential and threshold voltage is developed for
a dual-material graded-channel cylindrical gate-all-around (DMGC CGAA) FET by …

2-D-Nonlinear electrothermal model for investigating the self-heating effect in GAAFET transistors

M Belkhiria, F Echouchene, N Jaba… - … on Electron Devices, 2021 - ieeexplore.ieee.org
The objective of the present study is to analyze the heat transfer in the gate-all-around (GAA)
MOSFETs based on the Cattaneo and Vernotte (CV) model due to the finite heat …

Linearity distortion analysis of junctionless quadruple gate MOSFETs for analog applications

SK Gupta, AS Rawat, YK Verma, V Mishra - Silicon, 2019 - Springer
This paper examines a Junctionless quadruple gate (JLQG) MOSFET for analog and
linearity distortion performance by numerically calculating transconductance and its higher …