Single-electron transistor: review in perspective of theory, modelling, design and fabrication

R Patel, Y Agrawal, R Parekh - Microsystem Technologies, 2021 - Springer
Integrated circuit (IC) technology has grown tremendously over the last few decades. The
prime goal has been to achieve low-power and high-performance in logic and memory …

Core/shell/shell spherical quantum dot with Kratzer confining potential: Impurity states and electrostatic multipoles

DB Hayrapetyan, EM Kazaryan, LS Petrosyan… - Physica E: Low …, 2015 - Elsevier
An exactly solvable problem of impurity states is considered in core/shell/shell spherical
quantum dot. Kratzer molecular potential is taken for confinement potential. The analytical …

Comprehensive Ab Initio Study of Electronic, Optical, and Cohesive Properties of Silicon Quantum Dots of Various Morphologies and Sizes up to Infinity

S Niaz, AD Zdetsis - The Journal of Physical Chemistry C, 2016 - ACS Publications
We present a comprehensive and integrated model-independent ab initio study of the
structural, cohesive, electronic, and optical properties of silicon quantum dots of various …

Design and simulation of efficient code converter circuits for quantum-dot cellular automata

MR Beigh, M Mustafa - Journal of Computational and …, 2014 - ingentaconnect.com
Quantum-dot Cellular Automata (QCA) is one of the candidates among future nanoelectronic
computing technologies. This paper presents efficient design and layout of a novel Binary to …

Optimization of pressure in epitaxial growth from gas phase system to decrease energy costs

EL Pankratov, EA Bulaeva - Quantum Matter, 2015 - ingentaconnect.com
In this paper we introduce an approach to decrease energy costs during growth an epitaxial
layers from gas phase by minimization velocity of flow of composition of gases (gas-carrier …

Reliability aspects and performance analysis of single electron threshold logic based programmable logic array

A Ghosh, A Jain, N Basanta Singh… - … of Computational and …, 2015 - ingentaconnect.com
This paper deals with the single electron threshold logic gate based programmable logic
array design and different performance related issues. The main concern of this work is the …

A Detailed Study on Single Electron Transistors in Nano Device Technologies

S Darwin, EFI Raj, M Appadurai… - Energy Systems Design …, 2023 - igi-global.com
The rapid advancement of integrated circuit (IC) technology in the recent decades paved the
path for miniaturization of electronic devices. Nowadays all the handheld devices are battery …

Nano-scale silicon quantum dot-based single-electron transistors and their application to design of analog-to-digital convertors at room temperature

H Aminzadeh, MA Dashti, M Miralaei - Journal of Circuits, Systems …, 2017 - World Scientific
Room-temperature analog-to-digital converters (ADCs) based on nanoscale silicon (Si)
quantum dot (QD)-based single-electron transistors (SETs) can be very attractive for high …

Calculation of electrostatic multipoles of electron localized in narrow-band InSb spherical nanolayer

SM Amirkhanyan, EM Kazaryan… - Journal of Contemporary …, 2015 - Springer
One-electron states in narrow-band spherical InSb nanolayer are considered. Electron
dispersion law is described in double-gap Kane model, when electrons and light holes …

Design and Simulation of Single Electron Transistor Based High-Performance Computing System at Room Temperature

R Patel - 2021 - drsr.daiict.ac.in
" The VLSI technology has seamlessly grown over the years, that yields high-performance,
low-power and high-density devices. Over the several decades, the performance of existing …