Great progress has been made in recent years towards understanding the properties of
disordered electronic systems. In part, this is made possible by recent advances in quantum …

The spin control possibility and its application in optoelectronic devices began an intensive
research into its utilization, in particular, in the wide-gap semiconductors such as GaN …

Mn and Fe-doped GaN are widely studied prototype systems for hole-mediated magnetic
semiconductors. The nature of the hole states around the Mn and Fe impurities, however …

Using first-principles density functional theory (DFT) methods and size-converged supercell
models, we analyze the electronic and atomic structure of magnetic 3 d transition metal …

We report the influence of oxygen impurities in generating ferromagnetism in GaN doped
with Mn, Fe, and Cr through superexchange involving Mn–O–Mn, Fe–O–Fe, and Cr–N–Cr …

We generalize the multiband typical medium dynamical cluster approximation and the
formalism introduced by Blackman, Esterling, and Berk so that it can deal with localization in …

Ferromagnetic GaMnN in which manganese substitutes randomly gallium, can constitute a
major technological advance, especially due to the already dominating role of group III …

First-principles calculations were carried out in order to study the magnetic, electronic and
structural properties of the Mn-doped polar GaN (0 0 0 1) and non-polar GaN (1 0 1¯ 0) and …

Abstract Diluted Magnetic Semiconductors (DMS) a class of magnetic materials, which fill
the gap between ferromagnets and semiconductors (Galazka, Inst Phys Conf Ser 43, 133 …

Compound semiconductors doped with magnetically active transition metals (TM) are
actively pursued for semiconductor spintronics. Herein we report that delta doping (δ …