Effects of pressure on the electronic and optical properties of defect-free and defect-containing fused silica: A first-principles study
R Shen, Y Lu, Z Zhang - Vacuum, 2025 - Elsevier
Fused silica is a widely used optical material in high-power solid-state laser systems. The
electronic and optical properties of fused silica are affected by point defects and stress in the …
electronic and optical properties of fused silica are affected by point defects and stress in the …
[HTML][HTML] Theoretical studies on intrinsic electron traps in amorphous tantalum pentoxide
L Li, X Chen, G Zeng, G Yang, X Liu - Physics Letters A, 2024 - Elsevier
Charge traps in amorphous tantalum pentoxide (Ta 2 O 5) can degrade electrical
performance of electronic devices. An earlier study shows that a local region consisting of …
performance of electronic devices. An earlier study shows that a local region consisting of …
[HTML][HTML] Technique of High-Field Electron Injection for Wafer-Level Testing of Gate Dielectrics of MIS Devices
DV Andreev, VV Andreev, M Konuhova, AI Popov - Technologies, 2024 - mdpi.com
We propose a technique for the wafer-level testing of the gate dielectrics of metal–insulator–
semiconductor (MIS) devices by the high-field injection of electrons into the dielectric using a …
semiconductor (MIS) devices by the high-field injection of electrons into the dielectric using a …
Improvement of Amorphous InGaZnO Thin-Film Transistor Reliability and Electrical Performance Using ALD SiO Interfacial Layer on PECVD SiO Gate Insulator
T Lee, S Oh - IEEE Transactions on Electron Devices, 2024 - ieeexplore.ieee.org
Insulator engineering is required to improve the reliability of amorphous indium gallium zinc
oxide (a-IGZO) thin-film transistors (TFTs). Silicon dioxide (SiO2), which is widely used as …
oxide (a-IGZO) thin-film transistors (TFTs). Silicon dioxide (SiO2), which is widely used as …