Unveiling and Balancing the Passivation‐Transport Trade‐Off in Perovskite Solar Cells with Double‐Side Patterned Insulator Contacts
Including an ultrathin insulator interlayer at the perovskite/charge transport interface is a
critical strategy for suppressing surface recombination in state‐of‐the‐art perovskite solar …
critical strategy for suppressing surface recombination in state‐of‐the‐art perovskite solar …
Silicon heterojunction solar cells with electron selective TiOx contact
Silicon solar cells featuring carrier selective contacts have been demonstrated to reach ultra-
high conversion efficiency. In this work, the electron-selective contact characteristics of …
high conversion efficiency. In this work, the electron-selective contact characteristics of …
Emerging II-VI wide bandgap semiconductor device technologies
The demand for advanced electronic and optoelectronic devices has driven significant
research and development efforts toward exploring emerging semiconductor materials with …
research and development efforts toward exploring emerging semiconductor materials with …
Ultra-thin atomic layer deposited aluminium oxide tunnel layer passivated hole-selective contacts for silicon solar cells
In this work, we use ultra-thin thickness-controllable spatial atomic layer deposited (ALD)
aluminium oxide (AlO x) tunnel layers, which contain high negative fixed charges (Q f) …
aluminium oxide (AlO x) tunnel layers, which contain high negative fixed charges (Q f) …
Improved V2OX Passivating Contact for p‐Type Crystalline Silicon Solar Cells by Oxygen Vacancy Modulation with a SiOX Tunnel Layer
Transition metal oxide (TMO) thin films featuring tunable work function, high transmittance,
and simple fabrication process are expected to serve as carrier‐selective transport layers for …
and simple fabrication process are expected to serve as carrier‐selective transport layers for …
Structural Properties of Al–O Monolayers in SiO2 on Silicon and the Maximization of Their Negative Fixed Charge Density
D Hiller, J Göttlicher, R Steininger… - … applied materials & …, 2018 - ACS Publications
Al2O3 on Si is known to form an ultrathin interfacial SiO2 during deposition and subsequent
annealing, which creates a negative fixed charge (Q fix) that enables field-effect passivation …
annealing, which creates a negative fixed charge (Q fix) that enables field-effect passivation …
Understanding surface treatment and ALD AlOx thickness induced surface passivation quality of c-Si Cz wafers
In this paper, the passivation quality of crystalline silicon (c-Si) wafers, when passivated by
atomic layer deposited aluminum oxide (ALD AlO x), is investigated. Specifically, we …
atomic layer deposited aluminum oxide (ALD AlO x), is investigated. Specifically, we …
Passivation of aluminium–n+ silicon contacts for solar cells by ultrathin Al2O3 and SiO2 dielectric layers
Ultra‐thin thermally grown SiO2 and atomic‐layer‐deposited (ALD) Al2O3 films are trialled
as passivating dielectrics for metal–insulator–semiconductor (MIS) type contacts on top of …
as passivating dielectrics for metal–insulator–semiconductor (MIS) type contacts on top of …
Engineering aluminum oxide/polysilicon hole selective passivated contacts for high efficiency solar cells
Tunnel layer passivated contact technology is already highly efficient in case of selective
electron extraction but not as efficient in case of selective hole extraction. Thus far, SiO x/p+ …
electron extraction but not as efficient in case of selective hole extraction. Thus far, SiO x/p+ …
[HTML][HTML] Oxide-nitride nanolayer stacks for enhanced passivation of p-type surfaces in silicon solar cells
In the quest for ultra-high-efficiency silicon solar cells, optimising surface passivation has
emerged as a critical pathway to minimise losses and enhance device performance. Recent …
emerged as a critical pathway to minimise losses and enhance device performance. Recent …