Chemical mechanical planarization for microelectronics applications

PB Zantye, A Kumar, AK Sikder - Materials Science and Engineering: R …, 2004 - Elsevier
The progressively decreasing feature size of the circuit components has tremendously
increased the need for the global surface planarization of the various thin film layers that …

Scratch formation and its mechanism in chemical mechanical planarization (CMP)

TY Kwon, M Ramachandran, JG Park - Friction, 2013 - Springer
Chemical mechanical planarization (CMP) has become one of the most critical processes in
semiconductor device fabrication to achieve global planarization. To achieve an efficient …

A micro-contact and wear model for chemical–mechanical polishing of silicon wafers

Y Zhao, L Chang - Wear, 2002 - Elsevier
A micro-contact and wear model for chemical–mechanical polishing (CMP) of silicon wafers
is presented in this paper. The model is developed on the basis of elastic–plastic micro …

Atomistic mechanisms of Si chemical mechanical polishing in aqueous H2O2: ReaxFF reactive molecular dynamics simulations

J Wen, T Ma, W Zhang, ACT van Duin, X Lu - Computational Materials …, 2017 - Elsevier
ReaxFF reactive molecular dynamics simulations are employed to study the process of the
silica abrasive particle sliding on the Si (1 0 0) substrate in the aqueous H 2 O 2 in order to …

CMP of hard disk substrate using a colloidal SiO2 slurry: preliminary experimental investigation

H Lei, J Luo - Wear, 2004 - Elsevier
With magnetic heads operating closer to hard disks, the hard disks are forced to be ultra-
smooth. At present, chemical–mechanical polishing (CMP) has become a widely accepted …

Nano-to microscale wear and mechanical characterization using scanning probe microscopy

B Bhushan - Wear, 2001 - Elsevier
Scanning probe microscopy (SPM) techniques, specifically so-called atomic force/friction
force microscopy (AFM/FFM) are increasingly used for tribological studies of engineering …

Polishing pad surface characterisation in chemical mechanical planarisation

J McGrath, C Davis - Journal of Materials Processing Technology, 2004 - Elsevier
Chemical mechanical planarisation (CMP) is a polishing process used in the fabrication of
silicon wafers to achieve a globally planar wafer surface. The removal of material from the …

A mathematical model for chemical–mechanical polishing based on formation and removal of weakly bonded molecular species

Y Zhao, L Chang, SH Kim - Wear, 2003 - Elsevier
This paper presents a mathematical model that describes the chemical–mechanical synergy
and mechanism of material removal in chemical–mechanical polishing (CMP). The physical …

Probable role of abrasion in chemo-mechanical polishing of tungsten

J Larsen-Basse, H Liang - Wear, 1999 - Elsevier
The chemo-mechanical polishing process (CMP) has received much attention recently
because of its importance as a nano-scale finishing process for high value-added large …

Multiscale material removal modeling of chemical mechanical polishing

J Seok, CP Sukam, AT Kim, JA Tichy, TS Cale - Wear, 2003 - Elsevier
This paper describes a multiscale model for material removal during conventional chemical
mechanical polishing (CMP). Three spatial scales are considered in the integrated model:(i) …