Rapid advancement of wide-bandgap AlGaN semiconductor materials offers tremendous
opportunities in the field of ultraviolet (UV) optoelectronics for a wide range of advanced …

Ultraviolet light emitting diodes (UV LEDs) are one of the most promising technologies for
preventing future pandemics, improving health outcomes, and disinfecting water sources …

The influence of nucleation layer (NL) morphology on the structural property of AlN films
grown by metal organic chemical vapor deposition (MOCVD) has been investigated using …

We have investigated an Al modulation epitaxy (AME) method to obtain step-flow growth of
Al droplet free AlN layers by plasma assisted molecular beam epitaxy (MBE). At the usual …

Heteroepitaxial growth of aluminum nitride (AIN) has been explored by experiments, but the
corresponding growth mechanism is still unrevealed. Here, we use molecular dynamics …

An alternative source supply sequence was applied to aluminum nitride (AlN) growth by rf-
plasma-assisted molecular-beam epitaxy on silicon carbide (SiC) substrates with a high …

The application of an energy and mass selected ion beam assisted deposition setup to
investigate the influence of hyperthermal atomic and molecular nitrogen ion species during …

For the development of non-polar nitrides based optoelectronic devices, high-quality films
with smooth surfaces, free of defects or clusters, are critical. In this work, the mechanisms …

The application of an energy and mass selected ion beam assisted deposition setup to
investigate the influence of hyperthermal atomic and molecular nitrogen ion species during …