GaN integration technology, an ideal candidate for high-temperature applications: A review
In many leading industrial applications such as aerospace, military, automotive, and deep-
well drilling, extreme temperature environment is the fundamental hindrance to the use of …
well drilling, extreme temperature environment is the fundamental hindrance to the use of …
A comprehensive review for micro/nanoscale thermal mapping technology based on scanning thermal microscopy
Thermal characterization becomes challenging as the material size is reduced to
micro/nanoscales. Based on scanning probe microscopy (SPM), scanning thermal …
micro/nanoscales. Based on scanning probe microscopy (SPM), scanning thermal …
Electrothermal simulation and thermal performance study of GaN vertical and lateral power transistors
In this paper, we present self-consistent electrothermal simulations of single-finger and
multifinger GaN vertical metal-oxide-semiconductor field-effect transistors (MOSFETs) and …
multifinger GaN vertical metal-oxide-semiconductor field-effect transistors (MOSFETs) and …
An electrothermal model for AlGaN/GaN power HEMTs including trapping effects to improve large-signal simulation results on high VSWR
O Jardel, F De Groote, T Reveyrand… - IEEE Transactions …, 2007 - ieeexplore.ieee.org
A large-signal electrothermal model for AlGaN/GaN HEMTs including gate and drain related
trapping effects is proposed here. This nonlinear model is well formulated to preserve …
trapping effects is proposed here. This nonlinear model is well formulated to preserve …
Comparison of GaN HEMTs on diamond and SiC substrates
JG Felbinger, MVS Chandra, Y Sun… - IEEE Electron …, 2007 - ieeexplore.ieee.org
The performance of AlGaN/GaN high-electron-mobility transistors (HEMTs) on diamond and
SiC substrates is examined. We demonstrate GaN-on-diamond transistors with periphery …
SiC substrates is examined. We demonstrate GaN-on-diamond transistors with periphery …
AlGaN/GaN HFET reliability
High-voltage AlGaN/GaN HFETs can produce high RF output power with nearly ideal power-
added efficiency. But widespread adoption of these HFETs has been limited by a lack of …
added efficiency. But widespread adoption of these HFETs has been limited by a lack of …
Channel temperature analysis of GaN HEMTs with nonlinear thermal conductivity
A Darwish, AJ Bayba, HA Hung - IEEE Transactions on electron …, 2015 - ieeexplore.ieee.org
This paper presents an enhanced, closed-form expression for the thermal resistance, and
thus, the channel temperature of AlGaN/gallium nitride (GaN) HEMTs, including the effect of …
thus, the channel temperature of AlGaN/gallium nitride (GaN) HEMTs, including the effect of …
Channel temperature determination in high-power AlGaN/GaN HFETs using electrical methods and Raman spectroscopy
RJT Simms, JW Pomeroy, MJ Uren… - … on Electron Devices, 2008 - ieeexplore.ieee.org
Self-heating in AlGaN/GaN HFETs was investigated using electrical analysis and micro-
Raman thermography. Two typically employed electrical methods were assessed to provide …
Raman thermography. Two typically employed electrical methods were assessed to provide …
Temperature-dependent characterization of AlGaN/GaN HEMTs: Thermal and source/drain resistances
R Menozzi, GA Umana-Membreno… - … on Device and …, 2008 - ieeexplore.ieee.org
This paper shows the application of simple dc techniques to the temperature-dependent
characterization of AlGaN/GaN HEMTs in terms of the following: 1) thermal resistance and 2) …
characterization of AlGaN/GaN HEMTs in terms of the following: 1) thermal resistance and 2) …
Simple and accurate method to estimate channel temperature and thermal resistance in AlGaN/GaN HEMTs
S Martin-Horcajo, A Wang, MF Romero… - … on Electron Devices, 2013 - ieeexplore.ieee.org
Self-heating effects in AlGaN/GaN high-electron mobility transistors grown on three different
substrates have been evaluated for ambient temperatures between 0° C and 225° C. A …
substrates have been evaluated for ambient temperatures between 0° C and 225° C. A …