Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: A critical review
This article critically reviews the architectural novelties, emerging materials (substrate,
buffer, barrier & contact materials), technological advancements, processing techniques …
buffer, barrier & contact materials), technological advancements, processing techniques …
Challenges and opportunities for high-power and high-frequency AlGaN/GaN high-electron-mobility transistor (HEMT) applications: A review
The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has
the potential to deliver high power and high frequency with performances surpassing …
the potential to deliver high power and high frequency with performances surpassing …
Near-junction phonon thermal spreading in GaN HEMTs: A comparative study of simulation techniques by full-band phonon Monte Carlo method
Accurate thermal simulation is essential for the near-junction thermal management and
electro-thermal co-design of GaN HEMTs. While various methods have been employed to …
electro-thermal co-design of GaN HEMTs. While various methods have been employed to …
Diamond/GaN HEMTs: where from and where to?
JC Mendes, M Liehr, C Li - Materials, 2022 - mdpi.com
Gallium nitride is a wide bandgap semiconductor material with high electric field strength
and electron mobility that translate in a tremendous potential for radio-frequency …
and electron mobility that translate in a tremendous potential for radio-frequency …
Bias dependence of non-Fourier heat spreading in GaN HEMTs
In this article, self-heating in gallium nitride (GaN) high-electron-mobility transistors (HEMTs)
is studied by combining the technology computer-aided design (TCAD) and phonon Monte …
is studied by combining the technology computer-aided design (TCAD) and phonon Monte …
Correlation between electrical performance and gate width of GaN-based HEMTs
In this work, we comprehensively studied the correlation between the electrical
characteristics and the gate width () of GaN-based HEMTs. On the one hand, as is scaled …
characteristics and the gate width () of GaN-based HEMTs. On the one hand, as is scaled …
First-principles study on thermal transport properties of GaN under different cross-plane strain
J Xue, F Li, A Fan, W Ma, X Zhang - International Journal of Heat and Mass …, 2024 - Elsevier
With the development of power devices towards high integration and power, the electrical
and thermal stresses per unit area become more concentrated and intensified. The impact of …
and thermal stresses per unit area become more concentrated and intensified. The impact of …
6G roadmap for semiconductor technologies: Challenges and advances
N Cahoon, P Srinivasan… - 2022 IEEE International …, 2022 - ieeexplore.ieee.org
The sub-THz spectrum between 100GHz and 300GHz is of great interest for achieving next
generation 6G cellular network goals of ultra-high data rate, ultra-low latency and high …
generation 6G cellular network goals of ultra-high data rate, ultra-low latency and high …
Vertical GaN-on-GaN Schottky diodes as α-particle radiation sensors
Among the different semiconductors, GaN provides advantages over Si, SiC and GaAs in
radiation hardness, resulting in researchers exploring the development of GaN-based …
radiation hardness, resulting in researchers exploring the development of GaN-based …
[HTML][HTML] Correlation of heat transport mechanism and structural properties of GaN high electron mobility transistors
L Mitterhuber, B Kosednar-Legenstein… - Journal of Applied …, 2024 - pubs.aip.org
Grain sizes, impurities, and layer thicknesses in the nm-range affect the heat transport and,
hence, hinder proper heat dissipation of GaN-based devices. To obtain a clear picture of …
hence, hinder proper heat dissipation of GaN-based devices. To obtain a clear picture of …