Ferroelectric materials, the charge equivalent of magnets, have been the subject of
continued research interest since their discovery more than 100 years ago. The …

III-nitride semiconductors are promising optoelectronic and electronic materials and have
been extensively investigated in the past decades. New functionalities, such as …

Computing in the analog regime using nonlinear ferroelectric resistive memory arrays can
potentially alleviate the energy constraints and complexity/footprint challenges imposed by …

We report on the thickness scaling behavior of ferroelectric Sc 0.3 Al 0.7 N (ScAlN) films
grown on Mo substrates by molecular beam epitaxy. Switchable ferroelectricity is confirmed …

In this Letter, we demonstrated fully epitaxial ScAlN/AlGaN/GaN based ferroelectric high
electron mobility transistors (HEMTs). Clean and atomically sharp heterostructure interfaces …

Achieving ferroelectricity in III-nitride (III-N) semiconductors by alloying with rare-earth
elements, eg, scandium, has presented a pivotal step toward next-generation electronic …

Incorporating rare earth element scandium (Sc) into III-nitride wurtzite lattice offers
remarkable non-oxide ferroelectrics, tunable spontaneous polarization coefficients, and …

Ferroelectric scandium aluminum nitride (ScAlN), owing to its unique properties and
seamless integration with the mainstream GaN technology, has attracted considerable …

The efficient photoelectric conversion based on the ferroelectric property of a material has
attracted widespread attention in advanced optoelectronic systems. Such an electrically …

The effect of pure mechanical strain on ferroelectricity was investigated for (001)-one-axis-
oriented (Al0. 8Sc0. 2) N films deposited on (111) Pt-coated substrates with different thermal …