The incorporation of metal atoms into silicon nanowires during metal-particle-assisted
growth is a critical issue for various nanowire-based applications. Here we have been able …

In the past decades, group IV nanowires and nanoparticles have been the subject of
extensive research. Beside tremendous progress in morphological control and integration in …

In this study, nanowires/nanowalls were generated on a silicon wafer through a chemical
etching method. Octadecyltrichlorosilane (OTS) was deposited onto the nanowire/nanowall …

We report the growth of vertically aligned high-crystallinity silicon nanotube (SiNT) arrays on
silicon substrate by means of a Ni–Au bilayer catalyst engineering technique. Nanotubes …

The unique characteristics of silicon (Si) wires strongly depend on the wire structure, which
is dictated by the growth technique and mechanism. The in-depth understanding of the wire …

Metal-mediated vapor-liquid-solid (VLS) growth is a promising approach for the fabrication
of silicon nanowires, although residual metal incorporation into the nanowires during growth …

Direct synthesis of crystalline silicon (Si) nanowires at low temperatures has been achieved
through an electrochemical liquid–liquid–solid (ec-LLS) process. Liquid metal nanodroplets …

Control of surface defects and impurity doping are important keys to realizing devices that
use semiconductor nanowires (NWs). As a structure capable of suppressing impurity …

Vertical-oriented silicon nanowire (SiNW) arrays with shaped smooth, nanodot-, or NW-
structured surfaces offer many desirable advantages for advanced device applications. In …

Scanning Auger microscopy is currently gaining interest for investigating nanostructures or
thin multilayers stacks developed for nanotechnologies. New generation Auger nanoprobes …