Van der Waals heterostructures by design: from 1D and 2D to 3D
Heterostructures with designable electronic interfaces represent the material foundation for
modern electronic and optoelectronic devices. The conventional heterostructures rely on …
modern electronic and optoelectronic devices. The conventional heterostructures rely on …
Binary group III-nitride based heterostructures: band offsets and transport properties
In the last few years, there has been remarkable progress in the development of group III-
nitride based materials because of their potential application in fabricating various …
nitride based materials because of their potential application in fabricating various …
[HTML][HTML] Effect of self-heating on electrical characteristics of AlGaN/GaN HEMT on Si (111) substrate
In order to study the effect of self-heating of AlGaN/GaN high electron mobility transistors
(HEMTs) characteristics fabricated on Si (111) substrate, simulations of 2DEG temperature …
(HEMTs) characteristics fabricated on Si (111) substrate, simulations of 2DEG temperature …
Preparation of AlN thin film and the impacts of AlN buffer layer on the carrier transport properties of p-NiO/n-InN heterojunction by magnetron sputtering
WB Peng, YJ Zhou, GJ Xiang, Y Liu, JH Zhang… - Materials Science in …, 2022 - Elsevier
The aluminum nitride (AlN) films were deposited on Al 2 O 3 substrates at different nitrogen
flow rates by radio frequency (RF) magnetron sputtering. The X-ray Diffraction (XRD) …
flow rates by radio frequency (RF) magnetron sputtering. The X-ray Diffraction (XRD) …
Lattice-mismatched semiconductor heterostructures
Semiconductor heterostructure is a critical building block for modern semiconductor devices.
However, forming semiconductor heterostructures of lattice-mismatch has been a great …
However, forming semiconductor heterostructures of lattice-mismatch has been a great …
Growth of GaN films on silicon (1 1 1) by thermal vapor deposition method: Optical functions and MSM UV photodetector applications
In this study, gallium nitride (GaN) films were grown on n-Si (1 1 1) substrate by thermal
vapor deposition method in quartz tube furnace for different growth duration. Gallium metal …
vapor deposition method in quartz tube furnace for different growth duration. Gallium metal …
Highly Efficient Solar Energy Harvesting in Phosphorene–Graphene Quantum Dot van der Waals Heterostructures: An Ab Initio Approach
WMUG De Alwis, KLDM Weerawardene… - The Journal of …, 2024 - ACS Publications
This study delves into the intricacies of creating highly effective power conversion
assemblies from van der Waals heterostructures of phosphorene and graphene quantum …
assemblies from van der Waals heterostructures of phosphorene and graphene quantum …
Pulsed laser deposition of hexagonal GaN-on-Si (100) template for MOCVD applications
KC Shen, MC Jiang, HR Liu, HH Hsueh, YC Kao… - Optics express, 2013 - opg.optica.org
Growth of hexagonal GaN on Si (100) templates via pulsed laser deposition (PLD) was
investigated for the further development of GaN-on-Si technology. The evolution of the GaN …
investigated for the further development of GaN-on-Si technology. The evolution of the GaN …
Temperature-dependent transport properties of CVD-fabricated n-GaN nanorods/p-Si heterojunction devices
We report on the structural, electrical, and transport properties of high quality CVD-fabricated
n-GaN nanorods (NRs)/p-Si heterojunction diodes. The X-ray diffraction (XRD) studies …
n-GaN nanorods (NRs)/p-Si heterojunction diodes. The X-ray diffraction (XRD) studies …
Trap modulated photoresponse of InGaN/Si isotype heterojunction at zero-bias
nn isotype heterojunction of InGaN and bare Si (111) was formed by plasma assisted
molecular beam epitaxy without nitridation steps or buffer layers. High resolution X-ray …
molecular beam epitaxy without nitridation steps or buffer layers. High resolution X-ray …