The development of transparent p‐type oxide semiconductors with good performance may
be a true enabler for a variety of applications where transparency, power efficiency, and …

In its most compelling forms, large area electronics addresses a range of applications
outside those where monocrystalline Si and III-V integration are used, or it approaches those …

Electrolyte-gated transistors can function as switching elements, artificial synapses and
memristive systems, and could be used to create compact and powerful neuromorphic …

In this article, we review current understanding of the reliability of organic field‐effect
transistors, with a particular focus on degradation of device characteristics under bias stress …

The threshold voltage instabilities in nitride/oxide dual gate dielectric hydrogenated
amorphous silicon (u-Si: H) thin-film transistors are investigated as a function of stress time …

We present results on metal-insulator-semiconductor field-effect transistors using
conjugated organic semiconductors which can be processed from solution. The polymer …

Thick amorphous Si layers have been prepared by MeV self-ion-implantation and the
thermodynamic and structural properties examined by calorimetry, Raman-spectroscopy …

Organic field-effect transistors with unprecedented resistance against gate bias stress are
described. The single crystal and thin-film transistors employ the organic gate dielectric …

Recent studies of the bias‐stress‐driven electrical instability of organic field‐effect
transistors (OFETs) are reviewed. OFETs are operated under continuous gate and …

Amorphous-silicon thin-film transistors show a threshold voltage shift when subjected to
prolonged bias stress. For transistors made with silicon oxide as the gate dielectric, the …