This paper presents the first flip-chip-packaged and fully integrated Doppler micro-radar in
90-nm CMOS for noncontact vital-sign and vibration detection. The use of a smaller …

This paper presents a travelling-wave amplifier (TWA) for wideband applications
implemented in a 0.13 μm SiGe BiCMOS technology (ft= 300 GHz, fmax= 500 GHz). The …

Method and apparatus for detecting a movement, such as two or more periodic vibrations, of
a target, by sending a radar signal, eg, near 60 GHz, at the target and processing the signal …

This letter presents a differential voltage controlled oscillator (VCO) implemented in a 65 nm
bulk CMOS technology for the unlicensed 60 GHz band. It achieves a record efficiency of …

The research on the design of receiver front-ends for very high data-rate communication in
the 60 GHz band in nanoscale Complementary Metal Oxide Semiconductor (CMOS) …

The nothing-on-insulator (NOI) transistor was recently proposed and is based on the
conduction through a vacuum nanocavity. The main contributions of this brief are: 1) the NOI …

This paper presents the design and analysis of a millimeter-wave LNA-mixer, which adopts
a low-noise single-to-differential conversion balun with low phase (gain) imbalance, using a …

This letter presents a millimeter-wave active inductor circuit designed and fabricated in 65
nm bulk CMOS technology. The measurement results show an equivalent inductance of 133 …

This paper presents the work regimes of an atypical SOI device. The proposed device
belongs to the Tunneling FET class, but the main body is a vacuum cavity. Each layer has a …

Method and apparatus for detecting a movement, such as two or more periodic vibrations, of
a target, by sending a radar signal, eg, near 60 GHz, at the target and processing the signal …