Effect of Strain on Electron Transport and Quantum Lifetimes in InxGa1−xAs/In0.52Al0.48As Modulation Doped Double Quantum Well‐Based High Electron …
The effect of tensile and compressive strain on low‐temperature electron transport (τt) and
quantum (τq) lifetimes are analyzed as function of well width (w) in InxGa1− xAs/In0. 52Al0 …
quantum (τq) lifetimes are analyzed as function of well width (w) in InxGa1− xAs/In0. 52Al0 …