Diode characteristic of electrolyte-oxide-semiconductor structure for potential chemical...

T Kang, X Chen, J Zhu, Y Huang, Z Chen… - … Journal of Modern …, 2020 - World Scientific

Due to the outstanding performance of resistance random access memory (RRAM) in the
memory field, the study of resistive switching (RS) phenomena has become extremely …

被引用次数：1 相关文章所有 3 个版本

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Electrolyte-oxide-semiconductor structures as pH sensors based on resistive-switching characteristic

H Wang, Z Chen, X Chen, W Wu - 2016 IEEE 29th International …, 2016 - ieeexplore.ieee.org

An electrolyte-oxide-semiconductor (EOS) structure is reported as a pH sensor in this paper,
which provides a new method of pH sensing based on the resistive-switching characteristic …

被引用次数：1 相关文章所有 2 个版本

Resistive switching model for Electrolyte-oxide-semiconductor (EOS) structure

XY Ma, GC Sun, YF Chen… - The 8th Annual IEEE …, 2013 - ieeexplore.ieee.org

We find that the Electrolyte-Oxide-Semiconductor (EOS) structure, which is utilized a lot in
micro/nanofluidic devices, is not perfectly insulated as previously believed. There is a …

被引用次数：1 相关文章所有 2 个版本

Switching characteristic model and biochemical application analysis for electrolyte-oxide-semiconductor structure diodes

GC Sun, XY Ma, AS Tang, YF Chen… - 2012 7th IEEE …, 2012 - ieeexplore.ieee.org

We present a model and applications analysis of the switching characteristic of electrolyte-
oxide-semiconductor (EOS) structure diodes. The EOS structure consists of a heavily-doped …

被引用次数：1 相关文章所有 2 个版本

The phenomenon of “sharp corner” of Electrolyte-Oxide-Semiconductor structure for copper ions detection

JG Gao, H Wang, PC Ma, W Wu - The 9th IEEE International …, 2014 - ieeexplore.ieee.org

We report a “sharp corner” phenomenon in the diodetype current-voltage (IV) curves of the
Electrolyte-Oxide-Semiconductor (EOS) structure which is made up of Cu-ion solution, SiO 2 …