Design and Optimization of MOS Capacitor based Radiation Sensor for Space Applications
SC Anjankar, R Dhavse - Arabian Journal for Science and Engineering, 2024 - Springer
This paper proposes a unique sensor for detecting total ionizing dose (TID) on metal–oxide–
semiconductor (MOS) devices. The proposed capacitive radiation sensor is based on …
semiconductor (MOS) devices. The proposed capacitive radiation sensor is based on …
Comparison of total ionizing dose effect on tolerance of SCL 180 nm bulk and SOI CMOS using TCAD simulation
S Anjankar, R Dhavse - … and Networking: Select Proceedings of the Fourth …, 2022 - Springer
The long-term reliability of metal oxide semiconductor (MOS) devices in space technology
depends on the total ionizing dose (TID) effect. In MOS technology, power consuming …
depends on the total ionizing dose (TID) effect. In MOS technology, power consuming …
Ionization radiation-induced base current decreasing and narrowing effects in gated bipolar transistors
L Li, XC Chen, C Xiong, G Zeng, XQ Liu… - … on Nuclear Science, 2022 - ieeexplore.ieee.org
Ionizing radiation experiments on gated controlled lateral pnp (GLPNP) bipolar transistor
show that the base current obtained by gate sweeping (GS) exhibits two “unusual” …
show that the base current obtained by gate sweeping (GS) exhibits two “unusual” …
[HTML][HTML] Macro meso response and stress wave propagation characteristics of MCT high-voltage switch under shock load
Y Guo, C Chen, R Wang, E Tang - Defence Technology, 2024 - Elsevier
In order to study the dynamic and electrical coupling response characteristics of Metal Oxide
Semiconductor Controlled Thyristor (MCT) high-voltage switch under the synergic action of …
Semiconductor Controlled Thyristor (MCT) high-voltage switch under the synergic action of …
Metastable acceptors in boron doped silicon: evidence of the defects contributing to carrier induced degradation
X Chen, L Li, J Zhang, Y Jian, G Yang… - Journal of Physics D …, 2021 - iopscience.iop.org
This work focuses on the recombination-enhanced reactions of boron related defects in
compensated silicon and their impact on the electrical performance of silicon devices. Using …
compensated silicon and their impact on the electrical performance of silicon devices. Using …
An electron injection enhanced Bi-Mode MOS controlled thyristor to Suppress the snapback phenomenon
C Zhang, C Wang, L Su, W Yang… - IEICE Electronics …, 2024 - jstage.jst.go.jp
An electron injection enhanced bi-mode MOS controlled thyristor (IE-Bi-MCT) structure is
proposed by introducing a n-type carrier storage (CS) layer under the p++ diverter region of …
proposed by introducing a n-type carrier storage (CS) layer under the p++ diverter region of …
Displacement Damage Effects of Pulse Discharge Circuit Switched by Anode-Short MOS-Controlled Thyristor
L Li, XC Chen, G Zeng, XQ Liu, Y Jian… - … on Nuclear Science, 2022 - ieeexplore.ieee.org
The anode-short metal–oxide–silicon (MOS)-controlled thyristor (AS-MCT) is the latest
generation of MCT. Due to its MOS gating, high-current-rise rate, normally-OFF, and high …
generation of MCT. Due to its MOS gating, high-current-rise rate, normally-OFF, and high …
Ionization damage effects of pulse discharge circuit switched by anode-short MOS-controlled thyristor
The MOS-controlled Thyristor (MCT) has been characterized by MOS-gating, high current
rise rate, and high blocking capabilities. The anode short MCT (AS-MCT) is distinguished …
rise rate, and high blocking capabilities. The anode short MCT (AS-MCT) is distinguished …