Abstract An anti-corrosive FeO@ CuCo 2 S 4 electrocatalyst, with highly-active catalytic
sites, is fabricated using a mild hydrothermal and magnetron sputtering growth technique …

We present an atomic layer deposition (ALD) process for the synthesis of tin nitride (SnN x)
thin films using tetrakis (dimethylamino) tin (TDMASn, Sn (NMe2) 4) and ammonia (NH3) as …

A new ReaxFF reactive force field for the atomic layer deposition (ALD) of boron nitride (BN)
thin film growth using BCl3 and NH3 has been developed, and the initial stage of the BN …

AlGaN films with high Al content (Al/Ga∼ 5.5) were successfully grown via thermal atomic
layer deposition at low temperature (342° C) using trimethylaluminum and triethylgallium as …

Atomic layer deposition (ALD), based on self-limiting surface reactions, has been proven as
a superior deposition method for synthesis of nanoscale thin films. In the field of oxide ALD …

Zinc oxide (ZnO) is a transparent wide band gap semiconductor material with various
possible applications in form of thin films. Most previous studies on atomic layer deposition …

In the second part of the review, the areas and results of using nanotechnology based on
molecular layering in various branches of industry in the past 20 years are analyzed, and the …

Area-selective atomic layer deposition (AS-ALD) is a promising technique for fine nanoscale
patterning, which may overcome the drawbacks of conventional top-down approaches for …

Zinc sulfide (ZnS) is an emerging alternate n-type buffer layer for the cadmium-free thin-film
solar cells. The present research adopts a unique mixture of glycerol and tartaric acid for the …

In this work, white-emitting-alternating-current-thin film electroluminescent (w-ACTFEL)
devices are demonstrated using europium-doped zinc sulfide (ZnS: Eu) and zirconium oxide …