Chemical–mechanical polishing of 4H silicon carbide wafers

W Wang, X Lu, X Wu, Y Zhang, R Wang… - Advanced Materials …, 2023 - Wiley Online Library
Abstract 4H silicon carbide (4H‐SiC) holds great promise for high‐power and high‐
frequency electronics, in which high‐quality 4H‐SiC wafers with both global and local …

Improved chemical mechanical polishing performance in 4H-SiC substrate by combining novel mixed abrasive slurry and photocatalytic effect

W Wang, B Zhang, Y Shi, J Zhou, R Wang… - Applied Surface Science, 2022 - Elsevier
Silicon carbide (SiC) is challenging to process by chemical mechanical polishing (CMP)
given its anomaly mechanical hardness and chemically inert. However, improving the SiC …

Improvement in chemical mechanical polishing of 4H-SiC wafer by activating persulfate through the synergistic effect of UV and TiO2

W Wang, B Zhang, Y Shi, T Ma, J Zhou, R Wang… - Journal of Materials …, 2021 - Elsevier
Chemical mechanical polishing (CMP) has revolutionized the processing of semiconductor
material such as silicon carbide (SiC). However, the strong chemical bond between silicon …

Effects of polishing media on the surface chemical and micromechanical properties of SiC

X Li, X Wu, P Wu, J Yuan, Y Zhu - Computational Materials Science, 2024 - Elsevier
Abstract Hydrogen peroxide (H 2 O 2) has been widely used to improve polishing
performance in chemical mechanical polishing (CMP) of silicon carbide (SiC), but the …

[HTML][HTML] Ultra-precision diamond finishing of reaction-sintered silicon carbide enhanced by vibration-assisted photocatalytic oxidation

Z Geng, Y Liang, F Fang - Journal of Materials Processing Technology, 2024 - Elsevier
RS-SiC faces limitations in surface accuracy with conventional finishing processes due to its
high mechanical hardness and multiphase nature. In this study, vibration-assisted …

Meso-silica/Erbium-doped ceria binary particles as functionalized abrasives for photochemical mechanical polishing (PCMP)

A Chen, Y Duan, Z Mu, W Cai, Y Chen - Applied Surface Science, 2021 - Elsevier
We report the design and synthesis of meso-silica/ceria binary composite particles and their
usage as functionalized abrasives for photochemical mechanical polishing (PCMP). Meso …

Prediction of the surface roughness and material removal rate in chemical mechanical polishing of single-crystal SiC via a back-propagation neural network

J Deng, Q Zhang, J Lu, Q Yan, J Pan, R Chen - Precision Engineering, 2021 - Elsevier
Chemical mechanical polishing (CMP) is a common method for realising the global
planarisation and polishing of single-crystal SiC and other semiconductor substrates. The …

The mechanism of Fenton reaction of hydrogen peroxide with single crystal 6H-SiC substrate

J Deng, J Pan, Q Zhang, Q Yan, J Lu - Surfaces and Interfaces, 2020 - Elsevier
The strong oxidant hydroxyl radical (* OH) generated during Fenton reactions can be used
for the chemical mechanical polishing (CMP) of single-crystal silicon carbide (SiC). In this …

Tribological behavior of single crystal diamond based on UV photocatalytic reaction

W Liu, Q Xiong, J Lu, X Wang, Q Yan - Tribology International, 2022 - Elsevier
The tribological behaviors of single crystal diamond (SCD) under different UV photocatalytic
conditions (UV intensity, H 2 O 2 content, pH) were investigated by ball-on-disk rotating …

Influences of different carbon substrates on the morphologies of carbon/g-C3N4 photocatalytic composites and the purification capacities of different composites in the …

Z Shi, L Rao, P Wang, L Zhang - Chemosphere, 2022 - Elsevier
In order to explore the influence of various carbon introduction on the morphology and
photodegradation performance of C/gC 3 N 4 composites, three kinds of different carbon …