An optoelectronic integrated circuit (OEIC) with a 400 μm diameter avalanche photodiode
(APD) is present. The OEIC is designed for use in systems of optical wireless communication …

Optical receivers with potentially high operation bandwidth and low cost have received
considerable interest due to rapidly growing data traffic and potential Tb/s optical …

This paper presents design, mathematical analysis, and measurement of low noise single-
stage transimpedance amplifier (TIA) with scalable bandwidth using 130 nm bipolar …

A multiple quantum barrier (MQB) avalanche photodiode (APD) structure based on
GaN/AlxGa material system has been proposed in this paper which is capable of detecting …

An optoelectronic integrated circuit (OEIC) in a 0.35 μm BiCMOS technology is presented.
The receiver designed for optical wireless communication and communication over plastic …

Background: The spectral response of Multiple Quantum Barrier (MQB) nano-scale
avalanche photodiodes (APDs) based on Si~ 3C-SiC material system shows considerable …

The important optoelectronic properties like spectral response, excess noise characteristics,
time and frequency response of multiple quantum barrier (MQB) nano-scale avalanche …

A PSUB-strip-spatially-modulated photo detector (SMPD) and a DNW-strip-SMPD were
fabricated in a standard 0.18-µm CMOS process. We analyzed and compared the …

Optoelectronic receivers have several fundamental requirements that make them difficult to
implement practically. The primary subsystems of the optoelectronic receiver are the …

= −ARf 1 + A + jωRf Cin (1) |Zt0| = ∣ ∣ ∣ ∣ ∣ ∣ ∣ ∣ = ARf 1 + A ≃ Rf (2) = Rf 1 + A (3) 1
2πCinZin = 1 + A Page 1 カレントミラー回路を用いた広帯域 CMOS TIA 肥田 顕†(学生員) 水野 峻汰 …