m Diameter APD OEIC in BiCMOS
T Jukić, B Steindl… - IEEE Photonics …, 2016 - ieeexplore.ieee.org
An optoelectronic integrated circuit (OEIC) with a 400 μm diameter avalanche photodiode
(APD) is present. The OEIC is designed for use in systems of optical wireless communication …
(APD) is present. The OEIC is designed for use in systems of optical wireless communication …
Monolithic optoelectronic integrated broadband optical receiver with graphene photodetectors
C Cheng, B Huang, X Mao, Z Zhang, Z Zhang… - …, 2017 - degruyter.com
Optical receivers with potentially high operation bandwidth and low cost have received
considerable interest due to rapidly growing data traffic and potential Tb/s optical …
considerable interest due to rapidly growing data traffic and potential Tb/s optical …
Single stage low noise inductor-less TIA for RF over fiber communication
V Kumar, GS Saravanan, P Duraiswamy… - IEEE …, 2021 - ieeexplore.ieee.org
This paper presents design, mathematical analysis, and measurement of low noise single-
stage transimpedance amplifier (TIA) with scalable bandwidth using 130 nm bipolar …
stage transimpedance amplifier (TIA) with scalable bandwidth using 130 nm bipolar …
Multiple Quantum Barrier Avalanche Photodiode Based on GaN/AlGaN Heterostructures for Long Wavelength Infrared Detection
S Ghosh, A Acharyya, A Biswas, A Banerjee… - IEEE …, 2024 - ieeexplore.ieee.org
A multiple quantum barrier (MQB) avalanche photodiode (APD) structure based on
GaN/AlxGa material system has been proposed in this paper which is capable of detecting …
GaN/AlxGa material system has been proposed in this paper which is capable of detecting …
200 μm APD OEIC in 0.35 μm BiCMOS
T Jukić, B Steindl, R Enne, H Zimmermann - Electronics Letters, 2016 - Wiley Online Library
An optoelectronic integrated circuit (OEIC) in a 0.35 μm BiCMOS technology is presented.
The receiver designed for optical wireless communication and communication over plastic …
The receiver designed for optical wireless communication and communication over plastic …
Multiple quantum barrier nano-avalanche photodiodes-Part I: Spectral Response
S Ghosh, A Acharyya - Nanoscience & Nanotechnology-Asia, 2019 - ingentaconnect.com
Background: The spectral response of Multiple Quantum Barrier (MQB) nano-scale
avalanche photodiodes (APDs) based on Si~ 3C-SiC material system shows considerable …
avalanche photodiodes (APDs) based on Si~ 3C-SiC material system shows considerable …
Optoelectronic properties of multiple quantum barriers nano-scale avalanche photo diodes
S Ghosh, A Biswas, A Acharyya - International Journal of …, 2020 - inderscienceonline.com
The important optoelectronic properties like spectral response, excess noise characteristics,
time and frequency response of multiple quantum barrier (MQB) nano-scale avalanche …
time and frequency response of multiple quantum barrier (MQB) nano-scale avalanche …
Design of Psub-SMPD and DNW-SMPD fabricated in a standard 0.18-µm CMOS process
R Wang, C Fan, ZG Wang - IEICE Electronics Express, 2017 - jstage.jst.go.jp
A PSUB-strip-spatially-modulated photo detector (SMPD) and a DNW-strip-SMPD were
fabricated in a standard 0.18-µm CMOS process. We analyzed and compared the …
fabricated in a standard 0.18-µm CMOS process. We analyzed and compared the …
Frequency Response of Optoelectronic Receivers: The Motivation for Faster Transistors
W Lambrechts, S Sinha, W Lambrechts… - SiGe-based Re …, 2017 - Springer
Optoelectronic receivers have several fundamental requirements that make them difficult to
implement practically. The primary subsystems of the optoelectronic receiver are the …
implement practically. The primary subsystems of the optoelectronic receiver are the …
カレントミラー回路を用いた広帯域CMOS TIA
肥田顕, 水野峻汰, 内藤文哉, 中村誠… - 電子情報通信学会 …, 2018 - search.ieice.org
= −ARf 1 + A + jωRf Cin (1) |Zt0| = ∣ ∣ ∣ ∣ ∣ ∣ ∣ ∣ = ARf 1 + A ≃ Rf (2) = Rf 1 + A (3) 1
2πCinZin = 1 + A Page 1 カレントミラー回路を用いた広帯域 CMOS TIA 肥田 顕†(学生員) 水野 峻汰 …
2πCinZin = 1 + A Page 1 カレントミラー回路を用いた広帯域 CMOS TIA 肥田 顕†(学生員) 水野 峻汰 …