Nanoscale Field Effect Transistors: Emerging Applications
Nanoscale Field Effect Transistors: Emerging Applications is a comprehensive guide to
understanding, simulating, and applying nanotechnology for design and development of …
understanding, simulating, and applying nanotechnology for design and development of …
Analysis of Power, Delay and SNM of 6T & 8T SRAM Cells
V Choudhary, DS Yadav - 2021 5th International Conference …, 2021 - ieeexplore.ieee.org
6T and 8T SRAM cells have been compared on 180nm technology using an industry-
standard Cadence Virtuoso Tool. It's challenging to make an SRAM cell with low power …
standard Cadence Virtuoso Tool. It's challenging to make an SRAM cell with low power …
Binary Error and a three-level division multiplexing Dispersion analysis of a rat optical fibre communication system
AHO Almukhtar, S Kurnaz - 2022 International Symposium on …, 2022 - ieeexplore.ieee.org
In this paper, we look at how well the Three Level Code Division Multiplexing (3LCDM)
method works in high-speed optical fibre networking environments. Results reveal that the …
method works in high-speed optical fibre networking environments. Results reveal that the …
Parametric Inspection of 6T SRAM Cell
PK Pandey, DS Yadav - 2021 5th International Conference on …, 2021 - ieeexplore.ieee.org
Due to the rapid advancements in the field of low power circuits and fabrication technology,
the responsible factor which affects the circuit's consistency is gaining importance day by …
the responsible factor which affects the circuit's consistency is gaining importance day by …
An Experimental Evaluation of Resistive Defects and Different Testing Solutions in Low-Power Back-Biased SRAM Cells
N Mirabella, M Grosso, G Franchino, S Rinaudo… - Electronics, 2022 - mdpi.com
This paper compares different types of resistive defects that may occur inside low-power
SRAM cells, focusing on their impact on device operation. Notwithstanding the continuous …
SRAM cells, focusing on their impact on device operation. Notwithstanding the continuous …
Decoupled Plasma Nitridation (DPN) and Postnitridation Annealing (PNA) Treatment for Metal Boundary Effect Reduction
M Tian, K Chen, C Wang, T Guan… - … on Electron Devices, 2024 - ieeexplore.ieee.org
A decoupled plasma nitridation (DPN)/postnitridation annealing (PNA) process scheme to
reduce the metal boundary effect (MBE) was experimentally demonstrated using a 28-nm …
reduce the metal boundary effect (MBE) was experimentally demonstrated using a 28-nm …
Comparative Analysis of SRAM Cells with CMOS and CNTFET Technology
Rising demand for performance highlights the energy-efficient memory solutions that led to
the exploration of novel materials and device technologies. CMOS-based 6T SRAM cells …
the exploration of novel materials and device technologies. CMOS-based 6T SRAM cells …
[图书][B] Advanced Field-Effect Transistors: Theory and Applications
Advanced Field-Effect Transistors: Theory and Applications offers a fresh perspective on the
design and analysis of advanced field-effect transistor (FET) devices and their applications …
design and analysis of advanced field-effect transistor (FET) devices and their applications …
CMOS-Based SRAM with Odd-Numbered Transistor Configurations: An Extensive Study
DS Yadav, P Singh, V Choudhary - Advanced Field-Effect …, 2023 - taylorfrancis.com
Researchers working with electrical devices face the challenge of developing products that
have higher functionality while consuming a smaller amount of energy. The widespread use …
have higher functionality while consuming a smaller amount of energy. The widespread use …
[PDF][PDF] New techniques for quality and reliability enhancement in electronic systems
N Mirabella - 2024 - tesidottorato.depositolegale.it
The field of microelectronics has been growing at an exponential rate over the past few
decades. The development of smaller, faster, and more efficient electronic devices has …
decades. The development of smaller, faster, and more efficient electronic devices has …