Nitrogen-vacancy (NV) in diamond possesses unique properties for the realization of novel
quantum devices. Among the possibilities in the solid state, a NV defect center in diamond …

Atomic scale details of the formation of point defects and their evolution to phase
transformation in silicon (Si) implanted β-Ga 2 O 3 were studied using high resolution …

An overview of various processing and dopant considerations for the creation of heavily-
doped n-InGaAs is presented. A large body of experimental evidence and theoretical …

We present a scanning transmission electron microscopy (STEM) analysis of electron
irradiation-induced defects in Yb 2 Ti 2 O 7, which form in material with a deliberate Ti …

The electronic band structure of the (Ga, Mn) As system has been one of the most intriguing
problems in solid state physics over the past two decades. Determination of the band …

It is shown that the charged massive Schwinger model supports a periodic vacuum structure
for arbitrary charge density, similar to the common crystalline layout known in solid state …

The isolation of devices via ion implantation is one of the standard procedures in III-V
processing, but so far little information is available concerning the degree of damage …

Results are presented for deep implantation of nitrogen into n‐type GaAs. The main purpose
of these investigations is to clarify whether deep implantation can be a suitable process to …

The strain and crystalline perfection of GaAs implanted with either carbon, gallium, or both
carbon and gallium ions (5× 1014 cm− 2) were investigated using high‐resolution triple axis …

Experimental observations of dopant diffusion and defect formation are reported as a
function of implant temperature in Si implanted GaAs. The diffusion of Si during post‐implant …