III–V nanowires and nanowire optoelectronic devices
III–V nanowires (NWs) have been envisioned as nanoscale materials for next-generation
technology with good functionality, superior performance, high integration ability and low …
technology with good functionality, superior performance, high integration ability and low …
Metalorganic vapor phase epitaxy of III–V-on-silicon: Experiment and theory
O Supplie, O Romanyuk, C Koppka, M Steidl… - Progress in Crystal …, 2018 - Elsevier
The integration of III–V semiconductors with Si has been pursued for more than 25 years
since it is strongly desired in various high-efficiency applications ranging from …
since it is strongly desired in various high-efficiency applications ranging from …
Rationally designed single-crystalline nanowire networks
Rational bottom-up assembly of nanowire networks may be a way to successfully continue
the miniaturization, which is the main driving force behind the semiconductor industry. So …
the miniaturization, which is the main driving force behind the semiconductor industry. So …
Nanowires grown on InP (100): growth directions, facets, crystal structures, and relative yield control
Growth of III–V nanowires on the [100]-oriented industry standard substrates is critical for
future integrated nanowire device development. Here we present an in-depth analysis of the …
future integrated nanowire device development. Here we present an in-depth analysis of the …
[HTML][HTML] GaAs hetero-epitaxial layers grown by MOVPE on exactly-oriented and off-cut (1 1 1) Si: Lattice tilt, mosaicity and defects content
Integration of III-V devices with Si-photonics and fabrication of monolithic III-V/Si tandem
solar cells require the heteroepitaxy of III-V compounds on Si. We report on the lattice tilt …
solar cells require the heteroepitaxy of III-V compounds on Si. We report on the lattice tilt …
Recent progress in integration of III–V nanowire transistors on Si substrate by selective-area growth
K Tomioka, T Fukui - Journal of Physics D: Applied Physics, 2014 - iopscience.iop.org
We report on the recent progress in electronic applications using III–V nanowires (NWs) on
Si substrates using the selective-area growth method. This method could align vertical III–V …
Si substrates using the selective-area growth method. This method could align vertical III–V …
Ultracompact position-controlled InP nanopillar LEDs on silicon with bright electroluminescence at telecommunication wavelengths
Highly compact III–V compound semiconductor active nanophotonic devices integrated with
silicon are important for future low power optical interconnects. One approach toward …
silicon are important for future low power optical interconnects. One approach toward …
Indium antimonide nanowires: synthesis and properties
This article summarizes some of the critical features of pure indium antimonide nanowires
(InSb NWs) growth and their potential applications in the industry. In the first section …
(InSb NWs) growth and their potential applications in the industry. In the first section …
Revealing Inclined Twin Related Defects in III–V Nanowires Grown in Popular Alternative Crystallographic Directions
HA Fonseka, N Denis, JA Gott, X Yuan… - The Journal of …, 2024 - ACS Publications
Even after two decades of research, conventional⟨ 111⟩ B oriented III–V nanowires are
often perturbed by twins and stacking faults that form perpendicular to their growth direction …
often perturbed by twins and stacking faults that form perpendicular to their growth direction …
High-temperature nucleation of GaP on v-grooved si
The use of nanopatterned {111}-faceted v-grooves has recently shown promise for growing
high-quality III–V material on Si. Here, we study the effect of reactor conditions and surface …
high-quality III–V material on Si. Here, we study the effect of reactor conditions and surface …