Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high
electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor …

This paper presents a 10 kV SiC MOSFET based power stack, featuring medium voltage
power conversion with a simple two-level voltage source converter topology. The design of …

High frequency industrial induction heating processes typically employ resonant inverters to
reach high efficiency at high power levels. Advancements in wide band gap (WBG) device …

Thermal simulations evaluated temperature distribution of 10kV and 15kV SiC-MOSFETs
with larger die edge areas. Experimental temperature measurements of the die surface …

The auxiliary power module (APM) in the electrical vehicle converts the high voltage of
battery pack to the low voltage to supply the electric power for the internal loads, including …

Energy measurement of computer devices, which are widely used in the Internet of Things
(IoT), is an important yet challenging task. Most of these IoT devices lack ready-to-use …

Review on Intelligent Power Modules Page 1 Review on Intelligent Power Modules IWIPP 2021
Webinar Cyril BUTTAY Laboratoire Ampère, Lyon, France Page 2 Outline 1 Introduction 2 …

Paralleled discrete SiC MOSFETs lead to high current capability at low costs. Current
sharing is a critical issue for paralleling design with significant impacts on switching losses …

Generally, an induction heating system is composed of a power source (or inverter), tank
circuit (or work head), and a work coil. The amount of current flowing through the coil in an …

The safe and reliable operation of power converter requires a protection circuit with fast
response when the power device is subjected to the short‐circuit (SC) fault. In addition, the …