[HTML][HTML] A road map for reliable power electronics for more electric aircraft

AJ Wileman, S Aslam, S Perinpanayagam - Progress in Aerospace …, 2021 - Elsevier
The gradual evolution from hydro-pneumatic to electrical disposition of power in aircraft has
placed stringent requirements on the reliability of power electronic components in current …

Ensuring a reliable operation of two-level IGBT-based power converters: A review of monitoring and fault-tolerant approaches

K Hu, Z Liu, Y Yang, F Iannuzzo, F Blaabjerg - IEEE Access, 2020 - ieeexplore.ieee.org
Despite the emerging multi-phase and multi-level converters, two-level insulated gate
bipolar transistor-based power converters are still widely used in industrial applications in …

Power cycling test methods for reliability assessment of power device modules in respect to temperature stress

UM Choi, F Blaabjerg… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
Power cycling test is one of the important tasks to investigate the reliability performance of
power device modules in respect to temperature stress. From this, it is able to predict the …

A lumped thermal model including thermal coupling and thermal boundary conditions for high-power IGBT modules

AS Bahman, K Ma, F Blaabjerg - IEEE Transactions on Power …, 2017 - ieeexplore.ieee.org
Detailed thermal dynamics of high-power IGBT modules are important information for the
reliability analysis and thermal design of power electronic systems. However, the existing …

Prediction of bond wire fatigue of IGBTs in a PV inverter under a long-term operation

PD Reigosa, H Wang, Y Yang… - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
Bond wire fatigue is one of the dominant failure mechanisms in insulated-gate bipolar
transistor (IGBT) modules under cyclic stresses. However, there are still major challenges …

Advanced accelerated power cycling test for reliability investigation of power device modules

UM Choi, S Jørgensen… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
This paper presents an apparatus and methodology for an advanced accelerated power
cycling test of insulated-gate bipolar transistor (IGBT) modules. In this test, the accelerated …

IGBT junction temperature measurement via peak gate current

N Baker, S Munk-Nielsen, F Iannuzzo… - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
An electrical method for junction temperature measurement of MOS-gated power
semiconductor devices is presented. The measurement method involves detecting the peak …

Power routing: A new paradigm for maintenance scheduling

M Liserre, G Buticchi, JI Leon… - IEEE Industrial …, 2020 - ieeexplore.ieee.org
Currently, the necessity of efficient and reliable power systems is also increasing because of
the strict requirements that standards and regulations impose, but still costs have to remain …

IGBT junction temperature estimation via gate voltage plateau sensing

CH van der Broeck, A Gospodinov… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
A method for in situ high-bandwidth junction temperature estimation of insulated-gate
bipolar transistors is introduced in this paper. The method is based on the acquisition of the …

A modified DC power electronic transformer based on series connection of full-bridge converters

J Zhang, J Liu, J Yang, N Zhao… - IEEE transactions on …, 2018 - ieeexplore.ieee.org
This paper proposes a novel dc power electronic transformer (DCPET) topology for
locomotive, ac/dc hybrid grid, dc distribution grid, and other isolated medium-voltage and …