Layout dependence of total ionizing dose effects on 12-nm bulk FinFET core digital structures
T Wallace, M Spear, A Privat… - … on Nuclear Science, 2022 - ieeexplore.ieee.org
An apparent layout dependence for total ionizing dose (TID) susceptibility in a commercial
12-nm fin-based field-effect transistor (FinFET) technology is identified. While drain current …
12-nm fin-based field-effect transistor (FinFET) technology is identified. While drain current …
Total ionizing dose and proton single event effects in AMD Ryzen processor fabricated in a 12-nm bulk FinFET process
JL Taggart, SC Davis, R Daniel… - 2023 IEEE Radiation …, 2023 - ieeexplore.ieee.org
The Aerospace Corporation performed total ionizing dose (TID) and proton testing on the
AMD Ryzen 3200G processor. The Ryzen processor is a system on chip that contains a 4 …
AMD Ryzen 3200G processor. The Ryzen processor is a system on chip that contains a 4 …
Automation and optimization of stopping and range of ions in matter simulation runtime
VS Vaidyanathan, D Scrymgeour, M Titze - Nuclear Instruments and …, 2024 - Elsevier
Prior to every ion implantation experiment a simulation of the ion range and other relevant
parameters is performed using Monte-Carlo based codes. Although increasing computing …
parameters is performed using Monte-Carlo based codes. Although increasing computing …
The Effects of Threshold Voltage and Number of Fins per Transistor on the TID Response of GF 12LP Technology
AI Vidana, NA Dodds, RN Nowlin… - … on Nuclear Science, 2024 - ieeexplore.ieee.org
This abstract presents a comprehensive analysis of total ionizing dose (TID) response in
GlobalFoundries'(GFs) 12LP 12 nm bulk Fin-based field effect transistor (FinFET) technology …
GlobalFoundries'(GFs) 12LP 12 nm bulk Fin-based field effect transistor (FinFET) technology …