The solid state chemistry leading to the synthesis and characterization of metal nitrides with
N: M ratios> 1 is summarized. Studies of these compounds represent an emerging area of …

Tantalum nitride thin films are grown on silicon wafers using a mixture of Ar/N2 using DC
magnetron sputtering. The influence of nitrogen concentration on various features of …

The influence of nitrogen incorporation on the chemical composition, structure, mechanical,
and electrical properties of refractory (MoNbTaVW) 1− x N x high entropy alloy thin films is …

The search for sustainable energy solutions has led to extensive research on new
electrocatalysts that can convert electrical energy into chemical energy and back. Tantalum …

Tantalum nitride atomic layer deposition (ALD) was performed using sequential exposures
of (tert-butylimido) tris (diethylamido) tantalum (TBTDET) and either hydrazine or ammonia …

Tantalum nitride thin films were deposited by radio frequency (RF) reactive sputtering at
various N2/Ar gas flow ratios and working pressures to examine the change of their …

In this research, nanostructured tantalum nitride (TaN) thin films were deposited on 316L
stainless steel substrates by reactive magnetron sputtering. The effect of nitrogen flow ratio …

Thin films of barium tantalum oxynitride (BaTaO2N) with thicknesses of 150–680 nm are
grown on TaN/Ta substrates via the interfacial reaction of BaCO3/Ta3N5 layers in a N2 …

In this study film properties of sputter-deposited tantalum nitride (TaNx) thin layers are
investigated focusing on the impact of substrate properties, varying nitrogen content for film …

The main purpose of this work is to present and to interpret the change of structure and
physical properties of tantalum oxynitride (TaN x O y) thin films, produced by dc reactive …