The understanding and management of strain is of fundamental importance in the design
and implementation of materials. The strain properties of nanocrystalline materials are …

Many recent advances in microelectronics would not have been possible without the
development of strain induced nanodevices and bandgap engineering, in particular …

Since the first studies in the late 1970s most of the researches on Si1− xGex nanostructures
have been motivated by their potential applications in micro, opto and nanoelectronic …

Out-of-phase boundaries (OPBs) are translation boundary defects characterized by a
misregistry of a fraction of a unit cell dimension in neighboring regions of a crystal. Although …

Self-assembled nanostructures, such as quantum dots (QDs), quantum rings (QRs) and
nanowires (NWs), have been extensively studied because of their physical properties and …

We determined the enthalpic and entropic contributions to the thermodynamics of coherently
strained nanocrystals grown via deposition of pure Ge on Si (001) surfaces at 600 and 700° …

Coherent X-ray diffraction imaging is a rapidly advancing form of lensless microscopy. The
phase information of the diffraction pattern is embedded in a sufficiently sampled coherent …

SiGe islands grown by deposition of 10 monolayers of Ge on Si (001) at 740° C were
investigated by using a combination of selective wet chemical etching and atomic force …

An open (closed) system, in which matter is (not) exchanged through surface diffusion, was
realized via growth kinetics. Epitaxially grown Si-Ge: Si (001) islands were annealed in …

We study the effect of atomic ordering on the electronic and optical properties of
InGaAs/GaAs semiconductor nanostructures via atomistic empirical pseudopotentials. We …