The theory of an internal photoemission effect (IPE) in Schottky junctions has been
reviewed, and the existing Vickers model has been commented and enriched. Indeed, since …

In this work, we put forward the length design principle of the dual-injection integrated Ge-on-
Si photodetectors based on the characteristics of the light field distribution. When the length …

We propose and numerically analyze an integrated metal-semiconductor Schottky
photodetector consisting of a tapered metal nanoblock chain on a silicon ridge waveguide …

Emerging applications in wide-range optical fields require a common building block cell for
dense photonic integrated circuits with high performance and multi-functionality. We present …

We investigate the light absorption enhancement in waveguide Schottky photodetector
integrated with ultrathin metal/silicide stripe, which can provide high internal quantum …

We present a novel Schottky contact photodetector (PD) based on internal photoemission
effect (IPE) comprising of a straight air-slot-waveguide (WG) and a metal/silicide stripe …

We present a new type of fiber-coupled photodetector with a thermal-based optical sensor
head, which enables it to operate even in the presence of strong electro-magnetic …

Two types of configurations are theoretically proposed to achieve high responsivity
polarization-insensitive waveguide Schottky photodetectors, ie, a dual-layer structure for …

This paper presents the design and optimization of a microring resonator enhanced-internal
photoemission effect-photodetectors (MRRE-IPE-PDs) suitable for optical communication …

This Letter presents a new family of Schottky graphene/silicon (Si) photodetectors (PDs)
based on hollow-core photonic crystal fibers (HPCFs), working at both optical …