We review recent progress in the growth and characterization of Si 1− x Ge x islands and Ge
dots on (001) Si. We discuss the evolution of the island morphology with Si 1− x Ge x …

Abstract Ternary (I–III–VI) and quaternary (I–II–IV–VI) metal-chalcogenides like CuInS 2 or
Cu 2 ZnSn (S, Se) 4 are among the materials currently most intensively investigated for …

Semiconductor core–shell nanocrystals (NCs) have greatly improved luminescent properties
including better resistance to photobleaching and ligand exchange. It was suggested that …

In this work we study the nuances of composition determination of Al x Ga 1− x As alloys by
Raman spectroscopy. We mainly focus on understanding the effect of induced strain on the …

Resonant Raman scattering spectra of ultrasmall (< 2 nm) magic‐size nanocrystals (NCs)
are reported. The spectra of CdS and CdSx Se1‐x NCs, resonantly excited with 325 nm and …

We have made the successful growth of Ge layer on 8 in. Si (100) substrates by rapid
thermal chemical vapor deposition (RTCVD). In order to overcome the large lattice mismatch …

Colloidal II–VI semiconductor nanoparticles (NPs) and core–shell NPs obtained by means of
colloidal chemistry are studied by means of optical absorption, photoluminescence, and …

The resonant Raman scattering in GeSi/Si structures with GeSi quantum dots has been
analyzed. These structures were formed at various temperatures in the process of molecular …

High-quality Ge nanostructures are obtained by molecular beam epitaxy of Ge on Si (001)
substrates at 200 C and ex situ annealing at 400 C. Their structural properties are …

The method of confocal Raman microscopy is used for the first time to study the spatial
distribution of elemental composition and elastic strains in self-assembled Ge x Si 1− x/Si …