Light-emitting diodes with emission wavelengths less than 400 nm have been developed
using the AlInGaN material system. For devices operating at shorter wavelengths, alloy …

The lighting industry undergoes a revolutionizing transformation with the introduction of III-
nitride semiconductors, and" LEDs" became a household name. The solid-state light source …

We report on the growth of low-defect thick films of AlN and AlGaN on trenched
AlGaN/sapphire templates using migration enhanced lateral epitaxial overgrowth …

Growth conditions for AlN in two dimensional (2D) and three dimensional (3D) growth
modes were explored on SiC using metal organic chemical vapor deposition. High quality …

To obtain low-dislocation-density c-plane AlN on sapphire, we have studied the annealing of
AlN films at 1650 C. We prepared an AlN film with a thickness of 20 nm by radio-frequency …

We overview recent progress in growth aspects of group III-nitride heterostructures for deep
ultraviolet (DUV) light-emitting diodes (LEDs), with particular emphasis on the growth …

Using the example of epitaxial lateral overgrowth of AlN on trench‐patterned AlN/sapphire
templates, the impact of introducing a high‐temperature annealing step into the process …

The substrate miscut orientation of c-plane sapphire has an impact on the lateral growth and
coalescence of AlN during epitaxial lateral overgrowth of patterned AlN/sapphire templates …

We present overgrowth of nano-patterned sapphire with different offcut angles by
metalorganic vapor phase epitaxy. Hexagonal arrays of nano-pillars were prepared via …

A novel high temperature metalorganic vapor phase epitaxy (MOVPE) growth of AlN bridge
layer is reported. Positive influence of high temperature on the growth rate and reduction of …