Hafnium Oxide (HfO2) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

W Banerjee, A Kashir, S Kamba - Small, 2022 - Wiley Online Library
Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong
in the memory arena over the last two decades. Its dielectric properties have been …

From ferroelectric material optimization to neuromorphic devices

T Mikolajick, MH Park, L Begon‐Lours… - Advanced …, 2023 - Wiley Online Library
Due to the voltage driven switching at low voltages combined with nonvolatility of the
achieved polarization state, ferroelectric materials have a unique potential for low power …

[HTML][HTML] Next generation ferroelectric materials for semiconductor process integration and their applications

T Mikolajick, S Slesazeck, H Mulaosmanovic… - Journal of Applied …, 2021 - pubs.aip.org
Ferroelectrics are a class of materials that possess a variety of interactions between
electrical, mechanical, and thermal properties that have enabled a wealth of functionalities …

Highly enhanced ferroelectricity in HfO2-based ferroelectric thin film by light ion bombardment

S Kang, WS Jang, AN Morozovska, O Kwon, Y Jin… - Science, 2022 - science.org
Continuous advancement in nonvolatile and morphotropic beyond-Moore electronic devices
requires integration of ferroelectric and semiconductor materials. The emergence of hafnium …

Intrinsic ferroelectricity in Y-doped HfO2 thin films

Y Yun, P Buragohain, M Li, Z Ahmadi, Y Zhang, X Li… - Nature Materials, 2022 - nature.com
Ferroelectric HfO2-based materials hold great potential for the widespread integration of
ferroelectricity into modern electronics due to their compatibility with existing Si technology …

HfO2-based ferroelectrics: From enhancing performance, material design, to applications

H Chen, X Zhou, L Tang, Y Chen, H Luo… - Applied Physics …, 2022 - pubs.aip.org
Nonvolatile memories are in strong demand due to the desire for miniaturization, high-speed
storage, and low energy consumption to fulfill the rapid developments of big data, the …

Roadmap on ferroelectric hafnia-and zirconia-based materials and devices

JPB Silva, R Alcala, UE Avci, N Barrett, L Bégon-Lours… - APL Materials, 2023 - pubs.aip.org
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development
over the last decade, pushing them to the forefront of ultralow-power electronic systems …

Defects and aliovalent doping engineering in electroceramics

Y Feng, J Wu, Q Chi, W Li, Y Yu, W Fei - Chemical reviews, 2020 - ACS Publications
Since the positive influences of defects on the performance of electroceramics were
discovered, investigations concerning on defects and aliovalent doping routes have grown …

Interplay between oxygen defects and dopants: effect on structure and performance of HfO 2-based ferroelectrics

M Materano, PD Lomenzo, A Kersch… - Inorganic Chemistry …, 2021 - pubs.rsc.org
Ten years after the first report on ferroelectricity in HfO2, researchers are still occupied
unraveling the different causes behind this phenomenon. Among them, oxygen related …

Review of defect chemistry in fluorite-structure ferroelectrics for future electronic devices

MH Park, DH Lee, K Yang, JY Park, GT Yu… - Journal of Materials …, 2020 - pubs.rsc.org
Ferroelectricity in fluorite-structure oxides, such as (doped) HfO2 and ZrO2, and their solid
solution, nanolaminates, and superlattices has attracted increasing interest for future …