Atomistic simulation of physical vapor deposition of optical thin films
FV Grigoriev, VB Sulimov - Nanomaterials, 2023 - mdpi.com
A review of the methods and results of atomistic modeling of the deposition of thin optical
films and a calculation of their characteristics is presented. The simulation of various …
films and a calculation of their characteristics is presented. The simulation of various …
Three-dimensional kinetic Monte Carlo simulations of cubic transition metal nitride thin film growth
F Nita, C Mastail, G Abadias - Physical Review B, 2016 - APS
A three-dimensional kinetic Monte Carlo (KMC) model has been developed and used to
simulate the microstructure and growth morphology of cubic transition metal nitride (TMN) …
simulate the microstructure and growth morphology of cubic transition metal nitride (TMN) …
Growth, coalescence, and electrical resistivity of thin Pt films grown by dc magnetron sputtering on SiO2
Ultra thin platinum films were grown by dc magnetron sputtering on thermally oxidized Si
(100) substrates. The electrical resistance of the films was monitored in situ during growth …
(100) substrates. The electrical resistance of the films was monitored in situ during growth …
[PDF][PDF] 薄膜外延生长的计算机模拟
郑小平, 张佩峰, 刘军, 贺德衍, 马健泰 - 2004 - wulixb.iphy.ac.cn
以Cu 膜为例, 用Monte/Carlo 算法模拟了薄膜生长的随机过程, 并提出了更加完善的模型.
在合理选择原子间相互作用计算方法的基础上, 考虑了原子的吸附, 在生长表面的迁移及迁移所 …
在合理选择原子间相互作用计算方法的基础上, 考虑了原子的吸附, 在生长表面的迁移及迁移所 …
A hybrid kinetic Monte Carlo method for simulating silicon films grown by plasma-enhanced chemical vapor deposition
DG Tsalikis, C Baig, VG Mavrantzas… - The Journal of …, 2013 - pubs.aip.org
We present a powerful kinetic Monte Carlo (KMC) algorithm that allows one to simulate the
growth of nanocrystalline silicon by plasma enhanced chemical vapor deposition (PECVD) …
growth of nanocrystalline silicon by plasma enhanced chemical vapor deposition (PECVD) …
Atomistic Monte Carlo simulations of three-dimensional polycrystalline thin films
The deposition of polycrystalline thin films is essential to the fabrication of microelectronic
devices. About half of the processing steps are devoted to deposition of metal conductors …
devices. About half of the processing steps are devoted to deposition of metal conductors …
Kinetic Monte Carlo simulation of the electrodeposition of polycrystalline copper: Effects of substrates and deposition parameters on the microstructure of deposits
A two-dimensional cross-sectional poly-lattice kinetic Monte Carlo (2DCSP-KMC) model has
been developed for simulation of the electrodeposition of polycrystalline copper on either a …
been developed for simulation of the electrodeposition of polycrystalline copper on either a …
A computer simulation of nucleation and growth of thin films
P Zhang, X Zheng, S Wu, D He - Computational materials science, 2004 - Elsevier
A three-dimensional kinetic Monte Carlo technique has been developed for simulating the
nucleation and growth of thin films. The model involves incident atom attachment, surface …
nucleation and growth of thin films. The model involves incident atom attachment, surface …
薄膜生长过程的Monte Carlo 模拟
张佩峰, 郑小平, 贺德衍 - 2003 - ir.lzu.edu.cn
摘要用Monte Carlo 方法以Cu 为例对薄膜生长过程进行了计算机模拟. 不仅对原子的吸附,
迁移及脱附三种过程采用了更为合理的模型, 还考虑了这些过程发生时对近邻原子的连带效应 …
迁移及脱附三种过程采用了更为合理的模型, 还考虑了这些过程发生时对近邻原子的连带效应 …
薄膜外延生长及其岛核形成的计算机模拟
郑小平, 张佩峰, 贺德衍, 刘军, 马健泰 - 2004 - ir.lzu.edu.cn
摘要以Cu 膜为例, 用Monte Carlo 算法模拟了薄膜生长的随机过程. 找到了生长过程中的三个
优化温度, 并研究了它们的渐近一致性, 同时对各种温度区间内表面粗糙度, 相对密度随入射率的 …
优化温度, 并研究了它们的渐近一致性, 同时对各种温度区间内表面粗糙度, 相对密度随入射率的 …