GaN power integration technology and its future prospects
The planar nature of the GaN heterojunction devices provides extended dimensions for
implementing monolithic power integrated circuits. This article presents a comprehensive …
implementing monolithic power integrated circuits. This article presents a comprehensive …
Improving and Modeling Forward Gate ESD Behaviors of p-GaN Power HEMTs by Hybrid Gate Technology
Y Ma, S Li, R Ye, D Wang, W Lu, M Li… - IEEE Electron …, 2024 - ieeexplore.ieee.org
A novel hybrid gate technology is proved to effectively improve forward gate ESD reliability
for p-GaN power HEMTs. Unlike traditional technology, the gate metal consists of ohmic-type …
for p-GaN power HEMTs. Unlike traditional technology, the gate metal consists of ohmic-type …
Hybrid p-GaN/MIS Gate HEMT Suppressing Drain-Induced Dynamic Threshold Voltage Instability
C Wang, J Wang, X Wang, Z Liu, J He… - IEEE Electron …, 2024 - ieeexplore.ieee.org
This letter demonstrates a hybrid p-GaN/MIS gate HEMT (HG-HEMT) to suppress the drain-
induced dynamic threshold voltage (instability. By implementing a depletion-mode (D-mode) …
induced dynamic threshold voltage (instability. By implementing a depletion-mode (D-mode) …
1.5-kV AlGaN/GaN MIS-HEMT with 3-D Stacking Pad-Connected Schottky Structure Demonstrating Radiation Robustness Against Atmospheric Neutrons
F Zhou, L Mo, Z Hu, Q Yu, C Zou, W Xu… - IEEE Electron …, 2024 - ieeexplore.ieee.org
Atmospheric neutron-induced single-event burnout (SEB) is a severe reliability challenge for
terrestrial electronic components. In this work, the robust atmospheric neutron irradiation …
terrestrial electronic components. In this work, the robust atmospheric neutron irradiation …
98.7% Efficiency 1200–48 V LLC Converter Using Triple Step-Down Converter With One-Inductor Technique Compliant With EVSE Level 1
TW Wang, PJ Chiu, CY Chen, SH Hung… - IEEE Journal of Solid …, 2024 - ieeexplore.ieee.org
The proposed LLC flyback converter converts the 1200 V of the electric vehicle supply
equipment (EVSE) into a 48 V battery system. The triple step-down converter with one …
equipment (EVSE) into a 48 V battery system. The triple step-down converter with one …
Island-ohmic-PGaN gate HEMT: Toward steep subthreshold swing and enhanced threshold stability
An Island-Ohmic-GaN gate (IO-PGaN) structure is proposed and fabricated on a GaN-on-Si
wafer. Compared to the conventional Schottky-gate-GaN HEMTs, the “floating”-GaN layer is …
wafer. Compared to the conventional Schottky-gate-GaN HEMTs, the “floating”-GaN layer is …
Simulation and analysis of enhancement-mode AlGaN/GaN HEMT with PIN junction gate
To improve the threshold voltage and gate reliability of conventional enhancement-mode p-
GaN-gated AlGaN/GaN high electron mobility transistors while maintaining a low on …
GaN-gated AlGaN/GaN high electron mobility transistors while maintaining a low on …
Enhancement-Mode HEMT Performance and Mitigating Delay Through Double-Heterojunction With Connect Channel Utilization for Trap Effect Reduction
L Yang, H Sun, R Lv, Z Liu, Y Zhang, P Wang… - IEEE …, 2023 - ieeexplore.ieee.org
This paper presents a GaN-based High Electron Mobility Transistor (HEMT) with a
connected dual-channel structure (CDC-HEMT). Specifically, the Al0. 05Ga0. 95N layer …
connected dual-channel structure (CDC-HEMT). Specifically, the Al0. 05Ga0. 95N layer …
Comprehensive MVSG Compact Model for Power GaN Devices
R Fang, Y Feng, J Chong, K Chan… - … Devices and ICs …, 2023 - ieeexplore.ieee.org
GaN HEMTs are actively explored for power elec-tronics (eg power converters) due to its
superior material properties. High-quality compact model addressing critical behaviors of …
superior material properties. High-quality compact model addressing critical behaviors of …
An Enhancement-Mode Algan/GaN HEMT with Island-Ohmic p-GaN Featuring Stable Threshold voltage and Large Gate Swing
X Dai, Q Jiang, C Feng, Z Ji, S Huang… - … Devices and ICs …, 2024 - ieeexplore.ieee.org
A novel AlGaN/GaN HEMT based on an Island-Ohmic p-GaN gate (IO-PGaN) structure is
proposed. Thanks to the Island-Ohmic, the “floating” p-GaN is connected with the gate …
proposed. Thanks to the Island-Ohmic, the “floating” p-GaN is connected with the gate …