The quantum-confined Stark effect in a single self-assembled CdSe/ZnSe quantum dot was
studied by means of highly spatially resolved photoluminescence spectroscopy. A …

Statistical fluctuations of the magnetization are measured on the nanometer scale. As the
experimental monitor we use the characteristic photoluminescence signal of a single …

Several structures of small Cd i X i clusters, i≤ 16, have been characterized. Ringlike
structures have been found to be the lowest lying structures for i≤ 5 clusters and three …

The influence of the growth conditions during capping of CdSe/ZnSe quantum structures
grown on GaAs (001) by molecular-beam epitaxy (MBE) were systematically investigated by …

We report on a theoretical study of the hole states in II-IV quantum dots of spherical and
ellipsoidal shapes, described by smooth potential confinement profiles that can be modeled …

We have studied the temperature dependence of the photoluminescence (PL) spectra of
molecular beam epitaxy grown ultrathin Zn 1− x Cd x S e/Z n S e quantum wells with random …

We report on the photoluminescence (PL) studies of InSb-enriched quantum dots (QDs)
which are grown by molecular beam epitaxy in an InAs matrix. In Sb∕ In As heterostructures …

Molecular beam epitaxy is used to grow different types of ZnSe/CdSe/ZnSe heterostructures.
The topography of the bare CdSe surface studied with in situ atomic force microscopy is …

Using high-resolution x-ray diffraction (HRXRD), Raman scattering, photoluminescence, and
atomic-force microcopy, we investigated In x Ga 1− x As∕ GaAs quantum dot (QD) stacks …

IIeVI semiconductors have been the focus of interest of numerous research groups during
many years due to their demonstrated possibility of application in photodetectors, solar cells …