Ultrawide‐bandgap semiconductors: research opportunities and challenges
JY Tsao, S Chowdhury, MA Hollis… - Advanced Electronic …, 2018 - Wiley Online Library
Abstract Ultrawide‐bandgap (UWBG) semiconductors, with bandgaps significantly wider
than the 3.4 eV of GaN, represent an exciting and challenging new area of research in …
than the 3.4 eV of GaN, represent an exciting and challenging new area of research in …
Gallium nitride as an electromechanical material
Gallium nitride (GaN) is a wide bandgap semiconductor material and is the most popular
material after silicon in the semiconductor industry. The prime movers behind this trend are …
material after silicon in the semiconductor industry. The prime movers behind this trend are …
5G band n79 acoustic wave resonator RF filter circuit
RW Houlden, JB Shealy, SR Gibb… - US Patent 10,979,025, 2021 - Google Patents
US10979025B2 - 5G band n79 acoustic wave resonator RF filter circuit - Google Patents
US10979025B2 - 5G band n79 acoustic wave resonator RF filter circuit - Google Patents 5G …
US10979025B2 - 5G band n79 acoustic wave resonator RF filter circuit - Google Patents 5G …
15-ghz epitaxial aln fbars on sic substrates
Epitaxial AlN thin-film bulk acoustic resonators (FBARs) on SiC substrates with first-order
thickness extensional modes of 15-17 GHz are demonstrated. For the 15 GHz epi-AlN …
thickness extensional modes of 15-17 GHz are demonstrated. For the 15 GHz epi-AlN …
Film bulk acoustic resonators (FBARs) as biosensors: A review
Biosensors play important roles in different applications such as medical diagnostics,
environmental monitoring, food safety, and the study of biomolecular interactions. Highly …
environmental monitoring, food safety, and the study of biomolecular interactions. Highly …
Beyond CMOS: heterogeneous integration of III–V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems
TE Kazior - … Transactions of the Royal Society A …, 2014 - royalsocietypublishing.org
Advances in silicon technology continue to revolutionize micro-/nano-electronics. However,
Si cannot do everything, and devices/components based on other materials systems are …
Si cannot do everything, and devices/components based on other materials systems are …
High power, wideband single crystal XBAW technology for sub-6 GHz micro RF filter applications
R Vetury, MD Hodge, JB Shealy - 2018 IEEE International …, 2018 - ieeexplore.ieee.org
The authors report a Bulk Acoustic Wave (BAW) filter technology built using a 6-inch MEMS
wafer process on a Si substrate, compatible with single crystal and polycrystalline aluminum …
wafer process on a Si substrate, compatible with single crystal and polycrystalline aluminum …
Interfacing planar superconducting qubits with high overtone bulk acoustic phonons
Mechanical resonators are a promising way for interfacing qubits in order to realize hybrid
quantum systems that offer great possibilities for applications. Mechanical systems can have …
quantum systems that offer great possibilities for applications. Mechanical systems can have …
[HTML][HTML] X-band epi-BAW resonators
Using epitaxial aluminum nitride (AlN) developed for ultraviolet photonics and high-speed
electronics, we demonstrate suspended AlN thin-film bulk acoustic resonators (FBARs) at …
electronics, we demonstrate suspended AlN thin-film bulk acoustic resonators (FBARs) at …
Low loss, 3.7 GHz wideband BAW filters, using high power single crystal AlN-on-SiC resonators
JB Shealy, R Vetury, SR Gibb… - 2017 Ieee Mtt-S …, 2017 - ieeexplore.ieee.org
Bulk acoustic wave (BAW) filters operating at center frequency of 3.7 GHz, comprising of
BAW resonators utilizing single crystal aluminum nitride (AlN) piezoelectric films epitaxially …
BAW resonators utilizing single crystal aluminum nitride (AlN) piezoelectric films epitaxially …